Ion-Implanted Piezoelectric Layer for Acoustic Wave Frequency Tuning
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Solution Overview
Problem
Existing acoustic wave devices face challenges in achieving precise temperature compensation and mass loading, which affect their resonant frequencies and performance, particularly in high-frequency applications.
Innovation Solution
The use of ion implantation to modify the properties of piezoelectric layers in acoustic wave devices, including localized implantation for temperature compensation and mass loading adjustments, allows for precise control over the material properties and device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a temperature compensation layer is added to bring TCF closer to zero, then temperature stability is improved, but device complexity increases
Solution Approach 1:
The patent modifies the properties of existing layers through ion implantation rather than adding new layers. By changing the physical and chemical parameters of the piezoelectric layer and temperature compensation layer through controlled ion implantation, the patent achieves temperature compensation without increasing device complexity
Solution Approach 2:
The patent extracts the temperature compensation function from a separate additional layer and integrates it into the existing piezoelectric layer through ion implantation. This removes the need for extra compensation layers while maintaining the temperature stability function
2Adaptability or versatility
If mass loading layers are added to tune resonant frequencies, then frequency tuning capability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent uses ion implantation to precisely control the mass, composition, and distribution of atoms within existing layers. This allows for precise resonant frequency tuning by adjusting implantation parameters (ion type, energy, dose, depth) without requiring additional manufacturing steps or layers
Solution Approach 2:
The patent adds a new dimension of control by modifying material properties at the atomic level through ion implantation. This allows frequency tuning through compositional changes rather than relying solely on geometric dimensions, reducing sensitivity to manufacturing tolerances
3Manufacturing precision
If ion implantation is used to modify piezoelectric layer properties, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The ion implantation process serves multiple functions simultaneously: it modifies piezoelectric properties, provides temperature compensation, and enables mass loading for frequency tuning. This multi-functionality reduces the need for separate processing steps and maintains device complexity while improving manufacturing precision
Solution Approach 2:
The patent performs ion implantation at strategic points in the manufacturing process to pre-establish desired material properties. By preparing the piezoelectric layer with appropriate ion implantation before device assembly, subsequent manufacturing steps become simpler and more precise
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables improved temperature stability and resonant frequency tuning, enhancing the overall performance and reliability of acoustic wave devices, especially in high-frequency applications.
Implementation Method 1
selectively implanting ions into localized regions of the piezoelectric layer
Implementation Method 2
The SAW resonator can generate a surface acoustic wave on a surface of the piezoelectric layer
Data Source
AI summary
The disclosed technology relates to an acoustic wave device including a piezoelectric layer with localized regions having atoms implanted therein, and an electrode over the piezoelectric layer, where the acoustic wave device is configured to generate an acoustic wave.