Ion-Implanted Substrate Cutting for Uniform Semiconductor Thinning
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, challenges arise in efficiently removing temporary substrates while maintaining thickness uniformity and avoiding substrate edge peeling, which affect the integration density and efficiency of electronic components.
Innovation Solution
The use of ion implantation combined with annealing processes, such as pulsed laser or furnace annealing, to separate implantation regions from the substrate, allowing for the removal of temporary substrates and enabling the reuse of cut substrates, thereby addressing thickness uniformity and edge peeling issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional substrate removal methods are used, then temporary substrates can be removed, but thickness uniformity deteriorates and substrate edge peeling occurs
Solution Approach 1:
The substrate is divided into two distinct regions through ion implantation: a first region that is modified to be easily removable and a second region that remains intact. This segmentation allows selective removal of the temporary substrate portion while preserving the functional substrate, thereby achieving both thickness uniformity and preventing edge peeling.
Solution Approach 2:
Different regions of the substrate are given different properties through selective ion implantation. The first region receives ion implantation to create a modified structure with different removal characteristics, while the second region maintains its original properties. This local differentiation enables precise control over substrate removal and maintains structural integrity.
2Productivity
If ion implantation is used to separate implantation regions, then substrate removal efficiency improves, but process complexity increases
Solution Approach 1:
The ion implantation process modifies physical and chemical parameters of the substrate material in the first region, changing its removal characteristics. By adjusting implantation dose, energy, and ion type, the process optimizes substrate removal efficiency while maintaining a manageable process complexity through well-established ion implantation technology.
3Area of moving object
If minimum feature sizes are reduced to improve integration density, then more components can be integrated, but substrate removal challenges worsen
Solution Approach 1:
Ion implantation is performed as a preliminary action before substrate removal to pre-modify the first region. This preliminary modification creates a distinct structural difference that enables precise and controlled removal, even when dealing with minimum feature sizes and high integration density requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method provides cost and throughput advantages by effectively separating implantation regions from the substrate, ensuring uniformity and preventing peeling, thus enhancing the integration density and efficiency of semiconductor devices.
Implementation Method 1
ions are implanted in a substrate to form an implantation region of the substrate
Implementation Method 2
An annealing process using a pulsed laser or a furnace is applied to separate the implantation region from a remainder region of the substrate
Data Source
AI summary
Methods of ion implantation combined with annealing using a pulsed laser or a furnace for cutting substrate in forming semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a method includes forming a transistor structure of a device on a first semiconductor substrate; forming a front-side interconnect structure over a front side of the transistor structure; bonding a carrier substrate to the front-side interconnect structure; implanting ions into the first semiconductor substrate to form an implantation region of the first semiconductor substrate; and removing the first semiconductor substrate. Removing the first semiconductor substrate includes applying an annealing process to separate the implantation region from a remainder region of the first semiconductor substrate. The method also includes forming a back-side interconnect structure over a back side of the transistor structure.