Ion Implanter Wafer Angle Adjustment Mechanism

Solution Overview

Problem

In ion implantation processes, the existing ion implanters require a significant amount of time in the beam non-irradiation range to change the implantation angle, leading to reduced efficiency due to the need to reverse the wafer's movement direction and adjust angles outside the ion beam irradiation area.

Innovation Solution

The ion implanter includes a support mechanism, an implantation angle adjustment mechanism, and a drive mechanism that allows for the wafer to move into the beam non-irradiation range to change the implantation angle before reversing direction, thereby shortening the time spent in the non-irradiation range and maintaining ion beam exposure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the wafer movement direction is reversed at the end of the beam non-irradiation range to change implantation angle, then the implantation angle can be adjusted, but the time spent in the non-irradiation range increases, reducing processing efficiency

Engineering Contradiction:

Improveimplantation angle adjustmentVSAvoidprocessing efficiency

Core Design Contradiction:

Adaptability or versatilityVSProductivity

Solution Approach 1:

The implantation angle adjustment is initiated before the wafer completely exits the beam irradiation range. The rotation mechanism begins changing the implantation angle while the wafer is still partially exposed to the ion beam, and the angle change completes during the wafer's movement through the non-irradiation range. This preliminary action ensures that angle adjustment does not extend the time spent outside the beam range, thereby maintaining processing efficiency while achieving angle versatility.

Inventive Principle:

Principle #10Preliminary action

2Ease of operation

If the implantation angle is changed during the beam non-irradiation range, then the implantation angle can be adjusted without ion beam exposure, but the time in non-irradiation range increases significantly

Engineering Contradiction:

Improveimplantation angle adjustmentVSAvoidtime in non-irradiation range

Core Design Contradiction:

Ease of operationVSLoss of time

Solution Approach 1:

The rotation mechanism starts adjusting the implantation angle before the wafer fully enters the non-irradiation range, utilizing the transition period. This allows the angle change to be initiated when the wafer is still partially in the irradiation range, reducing the time the wafer must spend in the non-irradiation range for angle adjustment.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The system dynamically coordinates the wafer reciprocation motion with the implantation angle adjustment. The rotation mechanism operates during the wafer's movement through the non-irradiation range, and the timing is optimized so that the angle change completes before the wafer re-enters the irradiation range, minimizing idle time.

Inventive Principle:

Principle #15Dynamics

3Adaptability or versatility

If the wafer reciprocates through the beam non-irradiation range for angle adjustment, then angle changes can be made, but the overall processing speed decreases

Engineering Contradiction:

Improveimplantation angle adjustmentVSAvoidprocessing speed

Core Design Contradiction:

Adaptability or versatilityVSSpeed

Solution Approach 1:

The implantation angle adjustment is initiated before the wafer completely exits the beam irradiation range. The rotation mechanism begins changing the implantation angle while the wafer is still partially exposed to the ion beam, and the angle change completes during the wafer's movement through the non-irradiation range. This preliminary action ensures that angle adjustment does not extend the time spent outside the beam range, thereby maintaining processing efficiency while achieving angle versatility.

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS20230260741A1Ion implanter and ion implantation method

Publication Date: 2023.08.17 SUMITOMO HEAVY IND MATERIAL SOLUTIONS CO LTD

AI summary

The ion implantation method includes (a) moving a wafer adjusted to have a first implantation angle with respect to an ion beam from a beam irradiation range toward a beam non-irradiation range; (b) starting a change of the wafer from the first implantation angle to a second implantation angle while the wafer is moved within the beam non-irradiation range after the wafer having the first implantation angle is moved from the beam irradiation range; (c-1) reversing a movement direction of the wafer at an end of the beam non-irradiation range and moving the wafer toward the beam irradiation range; and (c-2) completing the change of the wafer from the first implantation angle to the second implantation angle while the wafer is moved within the beam non-irradiation range before the wafer is returned to the beam irradiation range.