Ion Implanter Beam Deflection for Wafer Replacement Time
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Solution Overview
Problem
The existing ion implanter technologies require substantial time for wafer replacement due to the mechanical operation of shutter plates in the beam blocking mechanism, leading to prolonged workpiece replacement times.
Innovation Solution
Incorporating a beam deflection device that uses electric or magnetic fields to quickly switch between irradiation-enabled and irradiation-disabled states, allowing for efficient ion beam direction change, thereby reducing wafer replacement time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a beam blocking mechanism with shutter plates is used to block the ion beam, then the ion beam can be physically blocked, but the workpiece replacement time is prolonged due to mechanical operation
Solution Approach 1:
The patent replaces the mechanical shutter plate system with an electromagnetic beam deflection system. The beam deflection device uses electric or magnetic fields to deflect the ion beam away from the workpiece path, eliminating the need for mechanical moving parts. This substitution dramatically reduces the time required to switch between irradiation and non-irradiation states during workpiece replacement, while maintaining reliable beam blocking through field-based control.
2Ease of operation
If shutter plates are mechanically operated to switch between open and closed states, then the beam blocking mechanism can control ion beam passage, but the switching speed is limited
Solution Approach 1:
The patent substitutes the mechanical shutter plate system with an electromagnetic beam deflection system that uses electric or magnetic fields to control ion beam direction. This eliminates mechanical inertia and friction limitations, enabling extremely rapid switching between irradiation and non-irradiation states. The electromagnetic field can be adjusted almost instantaneously, providing both ease of operation and high switching speed.
3Loss of time
If a beam deflection device is used to switch between irradiation states, then the workpiece replacement time is shortened, but the device complexity increases
Solution Approach 1:
The patent replaces a complex mechanical shutter system with an electromagnetic beam deflection system. While electromagnetic fields require control electronics, they eliminate the need for heavy mechanical components, precision mechanical actuators, and complex mechanical linkages. The overall system complexity is reduced by substituting a field-based control mechanism for a mechanical moving-part system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly shortens the workpiece replacement time by enabling rapid switching between irradiation states, enhancing the operational efficiency of the ion implanter.
Implementation Method 1
a beam deflection device that deflects an ion beam by at least one of an electric field and a magnetic field
Implementation Method 2
a beam deflection device that deflects an ion beam by at least one of an electric field and a magnetic field
Data Source
AI summary
Provided is an ion implanter or the like capable of shortening a replacement time of workpieces. An ion implantation method includes (a) deflecting an ion beam by at least one of an electric field and a magnetic field in an irradiation-disabled direction in which a wafer is incapable of being irradiated with the ion beam after a first wafer is irradiated with the ion beam directed in an irradiation-enabled direction in which the wafer is capable of being irradiated with the ion beam; (b) moving the first wafer from an ion implantation position, subsequently to the step (a); (e) disposing a second wafer different from the first wafer at the ion implantation position, subsequently to the step (b); and (f) returning the ion beam from the irradiation-disabled direction to the irradiation-enabled direction, subsequently to the step (e).