Ion Implanter Control for Non-Uniform Dose Distribution
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Solution Overview
Problem
The existing ion implantation processes face challenges in efficiently achieving desired two-dimensional non-uniform dose distributions on semiconductor wafers, requiring labor-intensive data set preparation and adjustment, which degrades productivity due to variations in wafer characteristics and the need for individualized settings for each wafer or lot.
Innovation Solution
An ion implanter system that includes a beam generator, beam scanner, platen driving device, and control device, which stores implantation recipes with two-dimensional non-uniform dose distributions and correction functions. The control device identifies similar recipes based on target patterns, adjusting beam scan speed and wafer motion speed to achieve desired dose distributions, reducing the need for manual data set preparation and improving productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If labor-intensive data set preparation and adjustment is performed for each wafer or lot to accommodate variations in wafer characteristics, then manufacturing precision of dose distribution is improved, but productivity deteriorates
Solution Approach 1:
The patent creates a master data set that serves as a template or copy for multiple wafers. Instead of preparing individualized data sets for each wafer, the same master data set is applied across multiple wafers, reducing preparation time while maintaining acceptable dose distribution precision through the correction functions built into the master data.
Solution Approach 2:
The master data set is designed to be universally applicable across multiple wafers and lots, accommodating variations in wafer characteristics through integrated correction functions. This single data set performs the function of multiple individualized data sets, improving productivity while maintaining dose distribution precision.
2Manufacturing precision
If individualized settings are created for each wafer or lot to account for wafer characteristic variations, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The master data set serves as a universal configuration that handles multiple wafers and lots with different characteristics. It incorporates correction functions that automatically adjust for variations, eliminating the need to manage multiple individualized data sets and reducing system complexity.
Solution Approach 2:
The master data set includes correction functions that dynamically adjust implantation parameters based on wafer characteristics. Rather than creating different data sets for different wafers, the system changes parameters within the same data set structure to accommodate variations, simplifying data set management.
3Manufacturing precision
If manual data set preparation and adjustment is performed for each wafer, then manufacturing precision is improved, but loss of time increases
Solution Approach 1:
The master data set is prepared in advance and includes pre-configured correction functions for various wafer characteristics. This preliminary preparation eliminates the need for time-consuming manual adjustment for each subsequent wafer, reducing data set preparation time while maintaining dose distribution precision.
Solution Approach 2:
The master data set can be quickly copied and applied to multiple wafers without requiring time-consuming manual preparation for each one. This copying approach dramatically reduces the time investment required while maintaining acceptable precision through the embedded correction functions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient realization of desired two-dimensional non-uniform dose distributions on semiconductor wafers, reducing the burden on users and improving ion implanter productivity by automating the process and accommodating variations in wafer characteristics.
Implementation Method 1
a beam generator that generates an ion beam
Implementation Method 2
a beam scanner that performs reciprocating scan with the ion beam in the first direction
Implementation Method 3
a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction
Implementation Method 4
implants the ions having a two-dimensional non-uniform dose distribution similar to the target pattern, into the wafer processing surface
Data Source
AI summary
An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.