Ion Implanter Estimation Function for Beam Characteristic Adjustment

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In semiconductor manufacturing, the ion implantation process requires precise adjustment of beam characteristics, which is time-consuming and degrades productivity due to the need for repeated measurements and adjustments, even when using past operation parameters.

Innovation Solution

An ion implanter system that generates a function for estimating beam characteristics based on accumulated data sets of operation parameters, allowing for quicker adjustment of operation parameters without direct measurement, by classifying data sets into clusters and using specific functions corresponding to each cluster.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If repeated measurements and adjustments are performed to achieve precise beam characteristics, then manufacturing precision is improved, but productivity deteriorates

Engineering Contradiction:
Improvebeam characteristics precisionVSAvoidion implantation throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The system performs preliminary measurements and adjustments to build a database of operation parameters and beam characteristics before actual ion implantation. This pre-established knowledge base enables estimation of beam characteristics without repeated measurements during production, thus improving productivity while maintaining precision

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system implements feedback by continuously measuring beam characteristics, comparing them with target values, and adjusting operation parameters accordingly. This closed-loop control ensures precise beam characteristics while reducing the number of iterative adjustments needed, thereby improving productivity

Inventive Principle:
Principle #23Feedback

2Productivity

If past operation parameters are used directly, then productivity is improved, but manufacturing precision deteriorates

Engineering Contradiction:
Improveion implantation throughputVSAvoidbeam characteristics accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The system creates a virtual model (estimation function) that copies the relationship between operation parameters and beam characteristics from historical data. This model allows prediction of beam characteristics based on operation parameters without direct measurement, enabling both productivity improvement and precision maintenance through parameter estimation rather than direct parameter copying

Inventive Principle:
Principle #26Copying

3Productivity

If measurement and adjustment processes are simplified, then productivity is improved, but manufacturing precision deteriorates

Engineering Contradiction:
Improveion implantation throughputVSAvoidbeam characteristics control
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The system replaces physical measurement and adjustment mechanisms with computational estimation. By using estimation functions based on historical data and machine learning, the system predicts beam characteristics without physical measurement, thereby simplifying the process, improving productivity, and maintaining precision through algorithmic control

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS11728132B2Ion implanter and ion implantation method
Publication Date: 2023.08.15 SUMITOMO HEAVY IND ION TECH
  • US11728132B2 patent drawing
  • US11728132B2 patent drawing
  • US11728132B2 patent drawing

AI summary

An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.