Ion Implanter Etch Prevention Members for Fluorine Gas Resistance
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Solution Overview
Problem
Conventional plasma ion implantation processes face inefficiencies due to contamination of inner chamber surfaces by fluorine-based gases, leading to defects in semiconductor wafers, as existing protection layers are time-consuming to form and inadequately cover the surfaces, resulting in reduced processing throughput and incomplete contaminant reduction.
Innovation Solution
The use of a process chamber with etch prevention members, such as silicon, yttrium oxide, or diamond-like carbon layers, on the inner surfaces and components to prevent etching by fluorine-based gases, allowing ion implantation without the need for a protection layer, thereby minimizing aluminum contamination and enhancing processing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protection layer is formed on the inner surfaces of the process chamber to prevent etching by fluorine-based gases, then the reliability of the chamber surfaces is improved, but the productivity is reduced due to the time-consuming formation process and incomplete coverage
Solution Approach 1:
The patent applies preliminary action by pre-coating the inner surfaces of the process chamber with etch prevention members (silicon, yttrium oxide, or diamond-like carbon layers) before ion implantation processes. This preliminary protective coating prevents etching by fluorine-based gases during processing, eliminating the need for time-consuming protection layer formation steps during production and thereby maintaining high productivity while ensuring surface reliability.
Solution Approach 2:
The patent employs composite materials by combining different protective materials (silicon, yttrium oxide, diamond-like carbon) with the chamber structure. These composite etch prevention members provide superior etch resistance compared to single-material protection layers, ensuring complete surface coverage and reliability without requiring additional processing steps that would reduce productivity.
2Ease of manufacture
If aluminum chamber walls are used to provide electrical ground, then the ease of manufacture is improved, but the object-affected harmful factors increase due to aluminum contamination from etching by fluorine-based gases
Solution Approach 1:
The patent applies local quality by selectively coating only the inner surfaces of the aluminum chamber walls with etch prevention members, while maintaining the bulk aluminum structure for electrical grounding. This localized protection prevents aluminum etching and contamination at the surface level where wafers are exposed, while preserving the ease of manufacture benefits of aluminum construction throughout the chamber body.
Solution Approach 2:
The etch prevention members act as intermediary layers between the aluminum chamber walls and the fluorine-based processing gases. These intermediate silicon, yttrium oxide, or diamond-like carbon layers prevent direct contact between the reactive gases and aluminum surfaces, thereby eliminating aluminum contamination of wafers while maintaining the electrical ground function of the aluminum structure.
3Reliability
If existing protection layers are applied to prevent etching, then the reliability is improved, but the device complexity increases due to additional coating steps and maintenance requirements
Solution Approach 1:
The patent reduces device complexity by implementing preliminary action through factory-pre-applied etch prevention members on chamber surfaces before delivery to the customer. This eliminates the need for complex protection layer formation equipment and multiple coating steps at the user facility, simplifying the overall system while maintaining surface protection reliability.
Solution Approach 2:
The etch prevention members provide self-service protection by being inherently resistant to etching by fluorine-based gases, requiring no active maintenance or regeneration during normal operation. The silicon, yttrium oxide, and diamond-like carbon materials maintain their protective function throughout the chamber's operational life, eliminating complex maintenance procedures and reducing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly reduces aluminum contamination on wafer surfaces, maintains processing efficiency, and eliminates the overhead of forming protection layers, ensuring consistent and improved ion implantation results across multiple wafers without the need for additional protective coatings.
Implementation Method 1
a process chamber with etch prevention members, such as silicon, yttrium oxide, or diamond-like carbon layers, on the inner surfaces and components to prevent etching by fluorine-based gases
Implementation Method 2
the ion implantation process generates an ion beam that implants p-type or n-type impurities onto a substrate
Implementation Method 3
plasma ion implantation which may be used to form very fine implantation patterns... by controlling the voltage generating plasma in a constituent process chamber instead of controlling the energy level of an ion beam used to accelerate impurity ions into the substrate
Implementation Method 4
plasma ion implantation... by controlling the voltage generating plasma in a constituent process chamber
Implementation Method 5
Connection port 14a may include a coil through which radio frequency (RF) power is supplied to process chamber 10
Data Source
AI summary
An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.