Ion Implanter Uniformity Tuning via Multi-Parameter Beam Profiling
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Solution Overview
Problem
Existing ion implanter systems face inefficiencies in uniformity tuning due to reliance on single-parameter approaches, requiring numerous iterations and increasing tuning time, as well as the need for re-tuning with every wafer batch due to changes in ion source degradation and beam-line element settings, leading to inconsistent ion beam geometries and reduced productivity.
Innovation Solution
A method involving multiple measurements along the ion beam path using both stationary and mobile Faraday cups to determine ion beam current density profiles as functions of time and spatial position, allowing for the calculation of a confidence level and adjustment of beam-line elements to achieve uniformity, reducing the number of iterations required for tuning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If single-parameter approaches are used for uniformity tuning, then the tuning process is simpler, but the number of iterations increases and tuning time increases
Solution Approach 1:
The patent changes from single-parameter to multi-parameter measurement approaches, simultaneously measuring ion beam current, position, and geometry parameters to reduce iteration cycles and tuning time while maintaining systematic control
Solution Approach 2:
The patent implements feedback mechanisms by continuously monitoring ion beam parameters during scanning and using this information to adjust beam-line elements, reducing the number of iterations needed to achieve uniformity
2Manufacturing precision
If re-tuning is performed with every wafer batch, then ion beam uniformity is maintained, but productivity decreases
Solution Approach 1:
The patent performs preliminary comprehensive measurements and adjustments before wafer batch processing, establishing beam uniformity in advance so that routine batches do not require re-tuning, thereby maintaining precision while improving throughput
Solution Approach 2:
The patent creates a universal tuning procedure that can be applied across multiple wafer batches without re-tuning, making the tuning process universally applicable and eliminating the need for repeated adjustments
3Loss of time
If ion source degradation and beam-line element setting changes are not accounted for, then tuning time is reduced, but ion beam geometry consistency deteriorates
Solution Approach 1:
The patent implements dynamic measurement and adjustment procedures that adapt to changing ion source degradation and beam-line element settings, allowing the system to maintain geometry consistency without excessive re-tuning by responding to actual conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances ion beam uniformity tuning efficiency by reducing the number of iterations needed and introducing a confidence level, ensuring consistent ion beam profiles and improved productivity by capturing all changes in the ion beam during scanning.
Implementation Method 1
A precise doping profile in an integrated circuit (IC) substrate and its thin-film structure is often crucial for proper IC performance. To achieve a desired doping profile, one or more ion species may be implanted in different doses and at different energy levels.
Data Source
AI summary
Techniques for uniformity tuning in an ion implanter system are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise measuring a first ion beam current density profile along an ion beam path. The method may further comprise measuring a second ion beam current density profile along the ion beam path. In addition, the method may comprise determining a third ion beam current density profile along the ion beam path based at least in part on the first ion beam current density profile and the second ion beam current density profile.