Ion Injection Simulation for Well Proximity Effect
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The well proximity effect in semiconductor device production causes unintended impurity distribution and fluctuations in device performance due to ion dispersion from the side face of the mask resist, leading to challenges in accurately simulating and optimizing ion injection processes.
Innovation Solution
An ion injection simulation method and device that calculate the reinjection dose and concentration distribution of impurities injected into a semiconductor substrate, using a distribution function and reinjection conditions to model and mitigate the well proximity effect, allowing for more precise ion injection simulations and device design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the thickness of mask resist is increased to prevent ion injection, then ion injection prevention is improved, but unintended impurity distribution occurs due to ion dispersion from side face
Solution Approach 1:
The patent introduces a calculation model that acts as an intermediary between the ion injection process and the mask resist design. By calculating the reinjection dose and concentration distribution of ions that disperse from the side face, the model enables optimization of mask resist thickness and shape to prevent both over-injection and side-face dispersion effects
Solution Approach 2:
The patent performs preliminary calculation of ion dispersion and reinjection effects before actual ion injection. By computing the concentration distribution and reinjection dose in advance, the process parameters (mask resist thickness, ion energy, injection dose) can be optimized beforehand to prevent the well proximity effect
2Productivity
If simple calculation method is used for impurity distribution, then calculation efficiency is improved, but accuracy of well proximity effect simulation deteriorates
Solution Approach 1:
The patent segments the ion injection process into distinct components: initial ion injection, side-face dispersion, and reinjection to the substrate. Each segment is calculated separately using appropriate models, allowing efficient computation while maintaining accuracy for each physical phenomenon
Solution Approach 2:
The patent changes the approach from direct complex simulation to parameter-based calculation. By using calculated parameters (reinjection dose, concentration distribution) derived from the distribution function, the model achieves accurate well proximity effect simulation through simplified mathematical relationships rather than complex physical simulation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables a simple and effective simulation of the well proximity effect, optimizing ion injection conditions to reduce fluctuations and improve semiconductor device performance by accurately modeling impurity distribution and reinjection patterns.
Implementation Method 1
ion injection simulation method including: calculating a reinjection dose reinjected from a side face of a structure to a substrate after being injected into the substrate and the structure formed on the substrate; and calculating concentration distribution of impurities injected into the substrate from a distribution function and the reinjection conditions of the reinjection dose
Data Source
AI summary
An ion injection simulation method includes: calculating a reinjection dose injected into a substrate and a structure formed on the substrate and reinjected from a side face of the structure; and calculating concentration distribution of impurities injected into the substrate from a distribution function and reinjection conditions of the reinjection dose.