Ion Irradiation Apparatus Shielding Measuring Device
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Solution Overview
Problem
Existing ion implantation apparatuses require longer treatment times due to increased number of substrate conveyance strokes, especially when dealing with large ion doses or small beam currents, which prolongs the ion implantation process and increases measurement frequency.
Innovation Solution
An ion irradiation apparatus with a support member and measuring device configuration that allows for two treatment modes: a first mode where the measuring device is partially shielded and a second mode where it is not, enabling efficient conveyance and beam current monitoring, thereby shortening the treatment time and maintaining beam state checks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the number of substrate conveyance strokes is increased to achieve larger ion doses or suppress outgassing, then the ion implantation treatment quality is improved, but the total treatment time becomes much longer
Solution Approach 1:
The patent performs beam current measurements in advance during conveyance strokes when the substrate is not being irradiated, before the actual ion implantation treatment. This preliminary measurement allows the system to detect beam fluctuations early and adjust parameters proactively, preventing the need for additional corrective conveyance strokes and reducing total treatment time while maintaining treatment quality
Solution Approach 2:
The patent implements a feedback mechanism where beam current is continuously monitored during the conveyance process, and the system automatically adjusts conveyance parameters based on measured fluctuations. This closed-loop control ensures uniform dose distribution is maintained while minimizing the number of conveyance strokes required, thereby reducing total treatment time without sacrificing treatment quality
2Manufacturing precision
If beam current is measured in each conveyance stroke to ensure uniform dose distribution, then the uniformity of dose distribution is improved, but the measurement time increases significantly
Solution Approach 1:
The patent measures beam current only during conveyance strokes when the substrate is not being irradiated, rather than during every single conveyance stroke. This partial measurement approach is sufficient to detect beam fluctuations and make necessary adjustments, achieving uniform dose distribution while significantly reducing the frequency and total time of measurements compared to measuring every stroke
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the total ion implantation treatment time by optimizing conveyance and beam monitoring, ensuring accurate beam state assessment and minimizing errors from fluctuations, while maintaining efficient dose distribution.
Implementation Method 1
a measuring device disposed forwardly in a traveling direction of an ion beam with respect to a position where the substrate is conveyed within a treatment chamber, the measuring device being configured to be irradiated with at least a part of the ion beam
Data Source
AI summary
An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.