Ion Implantation Mask Set for Semiconductor Warpage Control
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Solution Overview
Problem
Semiconductor substrates often exhibit warpage, leading to misalignment and unbonded portions during the manufacturing of semiconductor devices, particularly in three-dimensional memories, which can result in defects.
Innovation Solution
An ion implantation device with a ribbon-shaped ion beam and a mask set comprising multiple masks is used to selectively implant ions into semiconductor substrates, creating a controlled dose amount distribution to adjust and reduce warpage, utilizing a combination of fan-shaped and line-shaped openings in the masks to achieve precise ion distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If ion implantation is performed to reduce warpage, then warpage is reduced, but misalignment and unbonded portions occur due to substrate warpage
Solution Approach 1:
The patent performs ion implantation as a preliminary action before bonding to proactively reduce warpage. By implanting ions into the substrate prior to the bonding process, the substrate's stress distribution is adjusted in advance, preventing warpage-induced misalignment during subsequent bonding operations.
Solution Approach 2:
The patent applies local quality by performing selective ion implantation on specific regions of the substrate. By controlling the implantation conditions and patterns, different regions of the substrate receive tailored ion doses to create localized stress adjustments, thereby reducing warpage while maintaining alignment precision in critical bonding areas.
2Manufacturing precision
If multiple masks are used to control ion distribution, then dose amount distribution precision is improved, but device complexity increases
Solution Approach 1:
The patent segments the ion implantation process by using multiple masks, each with specific opening patterns. The first mask controls the overall ion beam path, while the second mask provides finer control over the dose distribution. This segmentation allows precise dose amount distribution by dividing the control function across multiple simpler mask components.
Solution Approach 2:
The patent introduces masks as intermediary elements between the ion beam source and the substrate. These masks act as mediators that modulate and control the ion distribution without requiring direct complex control of the ion beam itself, thereby achieving precise dose distribution while maintaining manageable device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces warpage in semiconductor substrates, enhancing bonding precision and reducing defects by creating uniform stress distribution, thereby improving the manufacturing yield of semiconductor devices.
Implementation Method 1
an ion beam irradiation unit that emits a ribbon-shaped ion beam; a target substrate holding unit that holds a target substrate disposed in a path of the ion beam
Data Source
AI summary
According to one embodiment, an ion implantation device includes an ion beam irradiation unit that emits an ion beam; a target substrate holding unit that holds a target substrate disposed in a path of the ion beam; a first mask holding unit that holds a first mask disposed in front of the target substrate in the path; and a second mask holding unit that holds a second mask disposed between the first mask and the target substrate in the path. The first mask includes a first opening pattern through which the ion beam is able to pass. The second mask includes a second opening pattern through which the ion beam is able to pass.