Scanning Ion Microscope Thin Film Neutralizer for Insulator Imaging

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Solution Overview

Problem

Scanning ion microscopes face challenges in observing insulator specimens due to image distortion caused by partial electrification, which existing neutralization methods fail to completely address, especially when converging ion beams and removing charged particles.

Innovation Solution

A scanning ion microscope using a gas field ionization ion source with a thin film supported by an electrically-conductive member, where ions are neutralized and secondary electrons are controlled to prevent distortion, allowing for precise observation of insulator specimens.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If ion beam is used to scan insulator specimen, then high resolution imaging is achieved, but image distortion occurs due to partial electrification of the specimen

Engineering Contradiction:
Improveimaging resolutionVSAvoidimage accuracy
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

A thin film is introduced as an intermediary layer between the ion beam and the insulator specimen. This thin film neutralizes the ion beam charges through charge exchange, converting ions into neutral atoms before they reach the specimen surface, thereby preventing electrification-induced image distortion while preserving the high resolution capability of ion beam scanning

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention changes the physical state parameter of the ion beam by neutralizing its charge. By controlling the charge state of the incident particles (from charged ions to neutral atoms), the harmful electrification effect on the insulator specimen is eliminated while maintaining the beam's spatial resolution characteristics

Inventive Principle:
Principle #35Parameter changes

2Reliability

If thin film is introduced to neutralize ion beam, then secondary electrons are generated, but background noise increases

Engineering Contradiction:
Improveneutralization effectivenessVSAvoidbackground noise
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The invention applies local quality control by using an electrically-conductive support member with spatially selective electric potential control. Different regions of the support member can be assigned different electric potentials to selectively attract or repel secondary electrons from specific areas, thereby controlling where secondary electrons are generated and directed

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The invention implements feedback control through means for controlling the electric potential of the support member. By monitoring secondary electron generation and adjusting the support member's electric potential accordingly, the system dynamically optimizes secondary electron control to minimize background noise while maintaining effective ion beam neutralization

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables precise and undistorted imaging of insulator specimens by neutralizing the ion beam and controlling secondary electrons, improving the convergence characteristics and reducing background noise.

Implementation Method 1

most of the ions applied to the thin film are neutralized after going through a first layer on the surface of the thin film, and are emitted as uncharged particles when transmitting through the thin film

Methodology Applied
Scientific EffectCharge exchange: Ionisation

Implementation Method 2

focused ion beam (FIB) devices that have gas field ionization ion source (GFIS) and use gas ions such as hydrogen (H2), helium (He), and neon (Ne)

Methodology Applied
Scientific EffectField ionization: Ionisation

Data Source

PatentUS9058959B2Scanning ion microscope and secondary particle control method
Publication Date: 2015.06.16 HITACHI HIGH TECH CORP
  • US9058959B2 patent drawing
  • US9058959B2 patent drawing
  • US9058959B2 patent drawing

AI summary

The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image.