Ion Milling Device with Feedback Control for Penning Source

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Solution Overview

Problem

Ion milling devices with penning type ion sources face issues with reproducibility due to changes in ion beam distribution caused by wear and dirt accumulation, affecting the precision and accuracy of surface processing for electron microscopy, especially in mass production settings.

Innovation Solution

An ion milling device with an ion beam measuring member and drive unit to adjust the ion beam emission conditions, including discharge voltage, gas flow rate, and source-sample distance, to maintain consistent ion distribution and improve reproducibility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If a penning type ion source is used for ion generation, then miniaturization of structure is achieved, but ion beam distribution changes due to wear and dirt accumulation, reducing reproducibility

Engineering Contradiction:
Improveion source sizeVSAvoidreproducibility of ion beam distribution
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent implements a feedback mechanism where an ion beam measuring member measures the ion beam distribution in real-time, and the measurement results are fed back to automatically adjust emission conditions (discharge voltage, gas flow rate, source-sample distance) to maintain consistent ion distribution despite wear and dirt accumulation in the compact penning type ion source

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent dynamically changes emission parameters (discharge voltage, gas flow rate, source-sample distance) based on measured ion beam distribution to compensate for degradation in the compact ion source, thereby maintaining reproducible ion beam characteristics despite the small size and associated wear issues

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If ion beam emission conditions are adjusted manually, then ion distribution can be controlled, but processing time increases and productivity decreases

Engineering Contradiction:
Improveion distribution controlVSAvoidprocessing speed
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent implements a self-service system where the ion beam measuring member continuously monitors ion beam distribution and the control unit automatically adjusts emission conditions without operator intervention, maintaining precision while eliminating manual adjustment time and improving productivity

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent replaces manual mechanical adjustment with an automated measurement and control system that uses sensors and feedback control to adjust emission parameters, substituting human operation with automated systems to maintain precision while increasing throughput

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Area of stationary object

If ion beam is emitted at low incident angle while rotating sample, then wide and smooth processed surface is obtained, but ion distribution uniformity becomes more critical

Engineering Contradiction:
Improveprocessed surface areaVSAvoidion distribution uniformity
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The patent uses the ion beam measuring member to continuously monitor ion distribution uniformity across the wide processed surface, and the control unit adjusts emission conditions based on feedback to maintain uniformity despite the low incident angle and sample rotation that expand the processed area

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances the reproducibility of ion distribution and processed shapes, ensuring consistent surface polishing and improved defect detection accuracy in electron microscopy.

Implementation Method 1

extracts an ion by generating plasma in an ion source

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

An effective penning method for miniaturizing a structure is often adopted for an ion generation source

Methodology Applied
Scientific EffectPenning effect: Penning Effect

Implementation Method 3

measures an ion beam current flowing through the ion beam measuring member by irradiating the ion beam measuring member with the ion beam

Methodology Applied
Scientific EffectIon beam: Ion Beam

Implementation Method 4

polishing a surface of a sample or a cross section thereof by irradiating the sample with an unfocused ion beam and flicking an atom on the surface of the sample without stress by a sputtering phenomenon

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS11508552B2Ion milling device
Publication Date: 2022.11.22 HITACHI HIGH TECH CORP
  • US11508552B2 patent drawing
  • US11508552B2 patent drawing
  • US11508552B2 patent drawing

AI summary

Provided is an ion milling device capable of improving the reproducibility of an ion distribution. An ion milling device includes: an ion source (1); a sample stage (2) on which a sample (4) to be processed by being irradiated with an unfocused ion beam from the ion source (1) is placed; and a drive unit (8) configured to be arranged between the ion source (1) and the sample stage (2), and to move a linear ion beam measuring member (7) extending in a first direction to a second direction orthogonal to the first direction, in which the drive unit (8) moves the ion beam measuring member (7) within an emission range of the ion beam in a state where the ion beam is outputted from the ion source (1) under a first emission condition, and an ion beam current flowing through the ion beam measuring member (7) is measured by irradiating the ion beam measuring member (7) with the ion beam.