Ion Milling Stage Sliding for Wide-Area Machining Without Redeposition

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Solution Overview

Problem

Existing ion milling devices face throughput reduction and redeposition issues when machining widths greater than the ion beam width or multiple machining points are required, necessitating repeated opening and evacuating of the sample chamber.

Innovation Solution

An ion milling device with a sample holder and sliding mechanism that allows for precise alignment and movement of the sample relative to the ion beam, enabling machining of desired widths and multiple points without chamber opening, using a mask to shield parts of the sample.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the sample chamber is opened and evacuated repeatedly for machining wide regions or multiple points, then the desired machining content can be obtained, but the throughput is reduced

Engineering Contradiction:
Improvemachining widthVSAvoidthroughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The sample stage is divided into multiple positionable locations (first location and second location) that can be independently moved and machined. This allows different regions of the sample to be processed in sequence without opening the chamber, as each location can be precisely positioned and machined while maintaining vacuum conditions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The sample stage is made dynamically movable between different positions (first location and second location) during the machining process. This dynamic repositioning capability allows the system to access multiple machining points and wide regions without breaking vacuum, thereby maintaining continuous operation and improving throughput while achieving desired machining widths.

Inventive Principle:
Principle #15Dynamics

2Device complexity

If the ion beam width is limited, then the ion source can be kept compact, but the machining width is restricted

Engineering Contradiction:
Improveion source structureVSAvoidmachining width
Core Design Contradiction:
Device complexityVSArea of stationary object

Solution Approach 1:

Instead of increasing the ion beam width in a single dimension, the system adds a spatial dimension by providing multiple sample locations (first and second locations) on the sample stage. This allows wide region machining by moving the sample to different positions rather than expanding the beam width, keeping the ion source compact while achieving large machining areas.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Improves throughput by allowing efficient machining of wide regions and multiple points on a sample within a single process, reducing redeposition and maintaining a vacuum state.

Implementation Method 1

The cross-sectional milling means a process in which a part of the ion beam is shielded by a mask (shielding plate) disposed on the upper portion of a sample, and the cross section of the sample along the end surface of the mask is subjected to sputtering.

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS12567557B2Ion milling device and ion milling method
Publication Date: 2026.03.03 HITACHI HIGH TECH CORP
  • US12567557B2 patent drawing
  • US12567557B2 patent drawing
  • US12567557B2 patent drawing

AI summary

Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.