Ion-Modified Microwave Dielectric Ceramic for Lower τf Stability

The patent applies parameter changes by substituting Ti4+ ions with (W1/3Zr1/2)4+ composite ions at specific concentrations (x=0.01 to 0.03). This changes the chemical composition parameters of the ceramic system, which in turn modifies the temperature coefficient τf from 346.0 ppm/°C to 243.8 ppm/°C at sintering temperature 1100°C, while maintaining the high Q×f value of 14381 GHz

The patent employs composite materials by creating a composite ion system (W1/3Zr1/2)4+ that combines tungsten and zirconium elements. This composite ion substitution into the rutile structure enables simultaneous optimization of multiple properties: the Q×f value reaches 14381 GHz while τf is reduced to 243.8 ppm/°C, achieving a balance between quality factor and temperature stability that neither pure TiO2 nor simple single-element substitution could achieve alone

The patent applies local quality by performing localized substitution of Ti4+ ions with (W1/3Zr1/2)4+ composite ions at specific lattice positions within the rutile structure. The substitution is controlled to occur at concentration x=0.01 to 0.03, creating local compositional variations that adjust τf without disrupting the overall crystal phase stability. This localized modification approach allows precise control of microwave dielectric properties while avoiding complete phase transformation

The patent uses parameter changes by carefully controlling the substitution concentration parameter x and the sintering temperature parameter (1050°C to 1150°C, optimally 1100°C). These parameter adjustments enable the introduction of (W1/3Zr1/2)4+ composite ions to modify τf from 346.0 to 243.8 ppm/°C while maintaining the rutile crystal phase structure and high Q×f value of 14381 GHz, avoiding harmful reactions that would occur at higher substitution levels or temperatures