Semiconductor Interconnect Structure With Solid Electrolyte Resistance Control
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Solution Overview
Problem
The miniaturization of semiconductor devices leads to increased resistance values in interconnects, which is a challenge in maintaining efficient electrical connectivity.
Innovation Solution
An interconnect structure is developed, comprising an interconnect layer made of a metal element, a metal layer opposite to the interconnect layer, and a solid electrolyte layer between them, which electrically insulates the interconnect layer from the metal layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the interconnect size is miniaturized to reduce device footprint, then the device area is reduced, but the resistance value of the interconnect increases
Solution Approach 1:
The patent applies parameter changes by introducing a solid electrolyte layer that enables dynamic adjustment of the interconnect layer's resistance through voltage control. The solid electrolyte layer (containing LiPON or similar materials) allows ion movement that modulates the electron concentration in the interconnect layer, thereby changing its resistance value from a fixed parameter to a controllable one. This resolves the contradiction by allowing miniaturized interconnects to maintain low resistance through active control rather than relying solely on physical dimensions.
Solution Approach 2:
The solid electrolyte layer serves as an intermediary between the upper and lower electrode layers, enabling resistance control without direct electrical contact between the electrodes. This intermediary layer facilitates ion transport that modulates the interconnect layer's electrical properties while providing electrical insulation, thus allowing resistance adjustment in miniaturized interconnects without compromising their structural integrity or increasing their physical size.
2Device complexity
If the interconnect layer thickness is reduced to achieve higher integration density, then the device complexity is reduced, but the resistance value increases
Solution Approach 1:
By introducing the solid electrolyte layer, the patent transforms the interconnect layer's resistance from a fixed property determined by its geometry to a dynamically controllable parameter. This allows thin interconnect layers to achieve low resistance through voltage-controlled ion movement in the solid electrolyte, compensating for the reduced cross-sectional area without requiring increased thickness or complex multi-layer structures.
Solution Approach 2:
The patent creates a composite interconnect structure consisting of the interconnect layer and solid electrolyte layer. This composite structure combines the low resistivity of metal interconnect layers with the ion-conducting properties of solid electrolytes, enabling resistance control in thin-film configurations that would otherwise be too resistive for high-density integration.
3Reliability
If a solid electrolyte layer is introduced to control resistance, then the interconnect resistance is reduced, but the device complexity increases
Solution Approach 1:
The patent segments the interconnect structure into distinct functional layers: the interconnect layer for current conduction and the solid electrolyte layer for resistance control. This segmentation allows each layer to be optimized independently and controlled separately through voltage application, reducing the complexity of managing resistance in a monolithic structure while maintaining overall system simplicity through modular design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the resistance value of the interconnect layer by increasing electron concentration through ion movement within the solid electrolyte layer, thereby mitigating the increase in resistance due to miniaturization.
Implementation Method 1
a solid electrolyte layer between the interconnect layer and the metal layer, the solid electrolyte layer enclosing the interconnect layer at least in a cross-sectional view taken along a plane orthogonal to the direction. The interconnect layer and the metal layer are electrically insulated from each other by the solid electrolyte layer.
Implementation Method 2
increasing electron concentration through ion movement within the solid electrolyte layer
Data Source
AI summary
An interconnect structure includes: an interconnect layer containing a metal element as a main component and extending in a direction; a metal layer opposite to the interconnect layer, and a solid electrolyte layer between the interconnect layer and the metal layer. The solid electrolyte layer encloses the interconnect layer at least in a cross-sectional view taken along a plane orthogonal to the direction. The interconnect layer and the metal layer are electrically insulated from each other by the solid electrolyte layer.