Ion Implantation Thick Film Resist for High-Aspect-Ratio Patterning
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Solution Overview
Problem
Current ion implantation resist compositions face challenges in achieving high rectangularity, resolution, ion implantation resistance, transmittance, and heat resistance, particularly for forming thick films with high aspect ratios.
Innovation Solution
A thick film resist composition comprising a polymer with specific repeating units, a photoacid generator, and a solvent, which forms a resist film with a thickness of 1.0 to 50 μm, providing high rectangularity, resolution, and heat resistance, and allowing for the formation of resist patterns with high aspect ratios.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the resist film thickness is increased to meet higher ion implantation doses, then the ion implantation resistance is improved, but the resolution and rectangularity deteriorate
Solution Approach 1:
The patent changes the molecular weight parameter of the polymer from conventional high values to specifically 5,000-19,000, and adjusts the repeating unit structure to achieve optimal balance between film thickness capability and pattern fidelity. This parameter optimization allows forming thick films (1-50 μm) while maintaining resolution
Solution Approach 2:
The patent creates a composite resist system combining polymer (A) with specific repeating units (A-1) to (A-4), photoacid generator (B), and solvent (C) in optimized ratios. This composite formulation achieves synergistic effects that simultaneously provide high ion implantation resistance and good resolution
2Reliability
If the resist film thickness is increased to form high aspect ratio patterns, then the ion implantation resistance is improved, but the rectangularity deteriorates
Solution Approach 1:
The patent optimizes the polymer molecular weight to 5,000-19,000 and adjusts the composition ratios of polymer, photoacid generator, and solvent to achieve the right balance between film-forming capability and shape fidelity. This enables forming thick films with high aspect ratios while maintaining good rectangularity
Solution Approach 2:
The patent introduces specific repeating units with different local properties (A-1) to (A-4) that provide different functions: some units enhance film strength and ion implantation resistance, while others improve rectangularity and resolution. This local quality differentiation within the polymer structure resolves the contradiction
3Strength
If the polymer molecular weight is increased to improve film strength, then the ion implantation resistance is improved, but the resolution and rectangularity deteriorate
Solution Approach 1:
The patent identifies and optimizes the molecular weight parameter to a specific range of 5,000-19,000, which is lower than conventional resists. This optimized parameter provides sufficient film strength for ion implantation resistance while maintaining the chain flexibility needed for high resolution and rectangularity
4Reliability
If the resist film thickness is increased to meet higher ion implantation doses, then the ion implantation resistance is improved, but the heat resistance deteriorates
Solution Approach 1:
The patent optimizes the polymer molecular weight and composition ratios to achieve a resist system that maintains structural integrity at elevated temperatures even when formed as thick films. The specific repeating units and composition provide thermal stability that prevents deformation during ion implantation heating
Solution Approach 2:
The patent performs preliminary optimization of the resist composition formulation before film formation, ensuring that the resist has inherent heat resistance properties built into its molecular structure. This preliminary preparation allows thick films to withstand ion implantation heating without degradation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high rectangularity, resolution, and heat resistance, enabling the formation of thick resist patterns with improved ion implantation resistance and high transmittance, suitable for high-energy ion implantation processes.
Implementation Method 1
a photoacid generator (B)
Implementation Method 2
an ion implantation process is employed in which impurity ions are introduced into a semiconductor substrate using a resist pattern as a mask. The impurity ions are implanted at high energy using an ion implanter
Data Source
AI summary
An ion implantation thick film resist composition includes a polymer (A) as defined herein, a photoacid generator (B) and a solvent (C), wherein the film thickness of the resist film formed from the composition is 1.0 to 50 μm; and the mass average molecular weight of the polymer (A) is 5,000 to 19,000.