Ion Sensor Semiconductor Gate Insulation Access Area
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Solution Overview
Problem
Current methods for measuring mobile ion concentrations in liquid samples, such as those in the healthcare industry, are time-consuming and costly, requiring large and expensive equipment and specialized personnel.
Innovation Solution
A semiconductor sensor apparatus and method using a field effect transistor structure with an ion access area in the gate insulation, allowing direct contact with the sample, which measures changes in electric characteristics to determine ion concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If chromatographic or spectroscopic methods are used to measure ion concentration, then measurement precision is improved, but device complexity and cost increase
Solution Approach 1:
The patent extracts the essential sensing function from complex chromatographic or spectroscopic systems by using only a semiconductor body with gate insulation and gate electrode. The ion detection capability is isolated into a simple field-effect transistor structure where ions in the sample directly modulate the electrical characteristics, eliminating the need for complex separation or detection apparatus while maintaining measurement precision
Solution Approach 2:
The patent creates a simplified model of ion detection by using the electrical field interaction principle that mimics the detection capability of complex instruments. The field-effect transistor structure copies the essential measurement function (detecting ion presence through electrical property changes) without requiring the full complexity of chromatographic or spectroscopic systems
2Measurement precision
If chromatographic or spectroscopic methods are used to measure ion concentration, then measurement precision is improved, but cost increases
Solution Approach 1:
The patent employs a disposable or low-cost semiconductor sensor that can be manufactured using standard semiconductor fabrication processes. The simple structure of the field-effect transistor sensor allows for mass production at low cost, making it economically viable for routine ion concentration measurements without requiring expensive specialized equipment
Solution Approach 2:
The patent extracts only the essential sensing elements needed for ion detection, eliminating all costly auxiliary systems. The sensor uses a minimal structure (semiconductor body, gate insulation, gate electrode) that can be manufactured using conventional semiconductor processes, dramatically reducing production costs compared to chromatographic or spectroscopic instruments
3Measurement precision
If chromatographic or spectroscopic methods are used to measure ion concentration, then measurement precision is improved, but time consumption increases
Solution Approach 1:
The patent replaces mechanical or chemical separation processes (chromatography) and complex spectroscopic analysis with a direct electrical field interaction method. Ions in the sample directly modulate the electrical characteristics of the field-effect transistor, providing immediate measurement without requiring time-consuming separation or multi-step analysis procedures
4Measurement precision
If specialized personnel are used to operate measurement equipment, then measurement precision is improved, but ease of operation worsens
Solution Approach 1:
The patent creates a self-service measurement system where the semiconductor sensor automatically detects ion concentration through direct electrical property changes. The device requires no specialized operation skills, calibration, or complex procedure execution - the sensor simply interacts with the sample and provides measurement results, making it accessible to non-experts while maintaining precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables rapid and cost-effective detection of ion concentrations with high accuracy, capable of measuring down to ppm levels, specifically applicable for medical applications like potassium ion detection in blood samples.
Implementation Method 1
The gate insulation comprises at least one ion access area providing access for ions in the sample to the insulating layer
Implementation Method 2
determining a change in an electric characteristic of the field effect device structure, and determining the ion concentration based on the change in the electric characteristic
Data Source
AI summary
The disclosure describes techniques for determining an ion concentration in a sample. According to these techniques of this disclosure, an ion concentration of a sample is determined based on detecting at least one change in an electrical characteristic of a semiconductor device due to a gate insulation layer of the semiconductor device placed in contact with the sample.