Ion Source Aperture Layout for Multi-Angle Beamlet Extraction
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Solution Overview
Problem
Existing ion beam systems struggle to efficiently produce multiple angled beamlets for semiconductor manufacturing without manual hardware modifications, which reduce throughput.
Innovation Solution
A workpiece processing system with an ion source featuring multiple extraction apertures and blockers that manipulate the plasma sheath to generate multiple beamlets at different angles, utilizing blockers of varying sizes, positions, and electrical biases to achieve distinct extraction angles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If manual hardware modifications are performed to change beam angles, then beam angle variability is improved, but productivity deteriorates due to reduced throughput
Solution Approach 1:
The ion source is segmented into multiple extraction apertures (first extraction aperture, second extraction aperture, etc.), each capable of producing beamlets at different angles. This segmentation allows simultaneous extraction of multiple beamlets with different angles without requiring manual hardware modifications, thus maintaining high throughput while achieving beam angle variability.
Solution Approach 2:
The system uses dynamically adjustable blockers positioned near extraction apertures to control plasma sheath and modify beam extraction angles in real-time. This dynamic control mechanism allows the system to adapt beam angles without manual intervention, resolving the contradiction between adaptability and productivity.
2Adaptability or versatility
If a traditional single-aperture ion source is used, then device complexity is reduced, but adaptability deteriorates due to inability to produce multiple angled beamlets
Solution Approach 1:
The ion source aperture is divided into multiple extraction apertures, each serving a specific function of extracting ions at particular angles. This segmentation enables multi-angle beamlet production while maintaining a relatively simple overall structure that does not require complex mechanical adjustment mechanisms.
Solution Approach 2:
Blockers are introduced as intermediary elements positioned near extraction apertures to manipulate plasma sheath and control beam extraction angles. These blockers act as mediators between the plasma source and extraction apertures, enabling angle control without directly modifying the aperture structure itself, thus limiting the increase in device complexity.
3Manufacturing precision
If blockers are used to modify plasma sheath for non-zero extraction angles, then extraction angle control is improved, but device complexity increases due to additional components
Solution Approach 1:
Blockers are positioned locally near specific extraction apertures rather than throughout the entire ion source. Each blocker is tailored to modify plasma sheath characteristics at its specific location, enabling precise extraction angle control for individual beamlets while minimizing the overall number of components and their complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables simultaneous production of multiple angled beamlets without manual intervention, enhancing throughput and flexibility in processing workpieces like etching and implantation.
Implementation Method 1
each blocker modifies a plasma sheath inside the ion source chamber proximate its respective extraction aperture so as to create two beamlets exiting from its respective extraction aperture
Implementation Method 2
the blockers may be electrically biased at different voltages to produce ion beamlets of different extraction angles
Implementation Method 3
ions are extracted from an ion source through an extraction aperture
Data Source
AI summary
A workpiece processing system with an ion source that includes two or more extraction apertures, each producing two beamlets at different extraction angles, is disclosed. The ion source includes blockers disposed within the ion source that manipulate the plasma sheath to allow extraction of ions at different extraction angles. The ion source may include at least two blockers, each proximate to a respective extraction aperture. These blockers may be different sizes or have different offsets relative to their respective extraction aperture. These differences result in ion beamlets of different extraction angles being extracted through the different extraction apertures. In another embodiment, the heights of the extraction apertures may differ. The blockers associated with these different sized extraction apertures may be identical, or may differ. Further, in some embodiments, the blockers may be electrically biased at different voltages to produce ion beamlets of different extraction angles.


