Ion Source Arc Chamber Inert Gas Separation Layer

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Solution Overview

Problem

The existing ion implanter devices face a significant reduction in service life due to the formation of a conductive film on the inner surfaces of the arc chamber, caused by by-products and impurity particles from the ionization process, which can lead to short-circuits and instability of the filament.

Innovation Solution

Incorporating a cleaning gas inlet for an inert gas, such as argon, which is ionized into a chemically inactive plasma that forms a separation layer within the arc chamber, preventing the conductive film formation and carrying away fallen particles, thereby extending the service life of the ion source device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If ion source gas is ionized in the arc chamber to generate plasma, then ion beam quality is achieved, but conductive film forms on the arc chamber surface reducing service life

Engineering Contradiction:
Improveservice life of ion source deviceVSAvoidconductive film formation
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

An inert gas (such as argon) is introduced as an intermediary substance between the ion source gas and the arc chamber wall. This inert gas forms a protective layer that prevents direct contact between the ionized plasma and the chamber surface, thereby preventing conductive film formation while allowing the ion beam generation process to continue

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent introduces an inert gas into the arc chamber to create an inert atmosphere that chemically isolates the reactive plasma from the arc chamber wall. This inert environment prevents the formation of conductive films by eliminating the chemical reactions that would otherwise occur between the plasma by-products and the chamber surface

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

2Duration of action of stationary object

If cleaning gas is introduced to prevent conductive film formation, then service life is extended, but device complexity increases

Engineering Contradiction:
Improveservice life of arc chamberVSAvoidnumber of gas inlets and control systems
Core Design Contradiction:
Duration of action of stationary objectVSDevice complexity

Solution Approach 1:

The inert gas inlet system serves multiple functions: it prevents conductive film formation on the arc chamber wall, maintains plasma stability, and can be used for chamber cleaning between runs. This multi-functionality reduces the need for separate dedicated cleaning systems, thereby limiting the increase in device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The inert cleaning gas plasma effectively separates the ion source plasma from the arc chamber surfaces, reducing conductive film formation and enhancing the longevity of the ion source device by preventing short-circuits and maintaining stability.

Implementation Method 1

The filament 103 is located on the sidewall of the arc chamber 100. When connected to a power supply, the filament 103 heats up to generate thermo-electrons.

Methodology Applied
Scientific EffectThermionic emission: Thermionic Emission

Implementation Method 2

The ion source gas is ionized into a plasma by colliding with the thermo-electrons generated by the filament 103.

Methodology Applied
Scientific EffectIonization: Ionisation

Implementation Method 3

An inert cleaning gas can be introduced into the arc chamber through a cleaning gas inlet such that the thermo-electrons ionize at least a portion of the inert cleaning gas into a first plasma

Methodology Applied
Scientific EffectPlasma formation: Plasma

Implementation Method 4

The reflector 102, when connected to a power supply, is used to reflect the thermo-electrons generated by the filament 103 in order to prevent the thermo-electrons from being lost through the body of the arc chamber 100.

Methodology Applied
Scientific EffectElectron reflection: Reflection

Data Source

PatentUS9177750B2Ion source device and method for providing ion source
Publication Date: 2015.11.03 SEMICON MFG INT (SHANGHAI) CORP
  • US9177750B2 patent drawing
  • US9177750B2 patent drawing
  • US9177750B2 patent drawing

AI summary

Various embodiments provide an ion source device and a method for providing the ion source. An exemplary ion source device can include an arc chamber, a filament, a reflector, a slit outlet, a source gas inlet, and/or a cleaning gas inlet. The filament can be configured to generate thermo-electrons in the arc chamber. The reflector can be configured to reflect the thermo-electrons back to the arc chamber. The slit outlet can be configured to exit a gaseous material out of the arc chamber. The source gas inlet and the cleaning gas inlet can be located on a same sidewall of the arc chamber configured to respectively introduce an ion source gas and an inert cleaning gas into the arc chamber.