Ion Source Chamber Plasma Cleaning for Deposit Removal
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Solution Overview
Problem
Conventional methods for cleaning the ion source chamber in plasma processing devices are labor-intensive and time-consuming, leading to reduced yield and increased costs due to the formation of deposits from reactive gases like fluorine-based gases during ion beam etching.
Innovation Solution
A method involving the injection and ionization of a cleaning gas, such as oxygen, within the ion source chamber to generate plasma that reacts with and removes deposits, thereby cleaning the chamber efficiently and effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If reactive gas is introduced to accelerate etching, then etching rate is improved, but deposits form in the ion source chamber
Solution Approach 1:
The patent converts the harmful deposits formed by reactive gas ionization into a beneficial cleaning opportunity by introducing a cleaning gas that reacts with the deposits. The cleaning gas (e.g., oxygen) is ionized to form plasma that chemically reacts with carbon-containing deposits, transforming them into volatile compounds (CO, CO2) that can be pumped away, thus converting the harmful staining effect into a self-cleaning mechanism.
Solution Approach 2:
The patent changes the chemical composition parameter of the gas in the ion source chamber by introducing a cleaning gas different from the etching gas. This parameter change allows the plasma to have different reactive properties - instead of forming deposits like fluorine-based etching gases, the oxygen-based cleaning gas reacts with existing deposits to remove them, thereby changing the chamber's surface condition.
2Object-generated harmful factors
If manual cleaning of the ion source chamber is performed, then deposits are removed, but production time is lost and yield is reduced
Solution Approach 1:
The patent implements self-service by enabling the ion source chamber to clean itself through automated plasma treatment. The cleaning gas is automatically introduced and ionized to react with deposits, and the vacuum system automatically removes the reaction products. This eliminates the need for manual intervention, allowing continuous automated operation and preventing production time loss.
Solution Approach 2:
The patent enables continuous useful action by making the cleaning process an automated, repeatable cycle that can be performed between etching batches without stopping production. The cleaning gas introduction, plasma generation, and deposit removal form a continuous automated sequence that maintains chamber readiness for ongoing production, unlike manual cleaning which interrupts the production flow.
3Object-generated harmful factors
If cleaning gas is introduced into the ion source chamber, then deposits are removed through plasma reaction, but additional process steps are required
Solution Approach 1:
The patent applies universality by designing the gas introduction system to serve multiple functions: the same infrastructure that introduces etching gases can also introduce cleaning gases, and the plasma generation system handles both etching and cleaning modes. This multi-functionality allows deposit removal without requiring separate dedicated cleaning equipment, thereby minimizing additional device complexity.
Solution Approach 2:
The patent merges the cleaning function with the existing plasma generation system. The cleaning gas is introduced through the same gas delivery infrastructure used for etching gases, and the plasma is generated using the existing electromagnetic field generation equipment. By combining cleaning with existing etching infrastructure, the patent avoids adding complex separate cleaning systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the cleaning efficiency, reduces time and labor costs, and maintains a clean ion source chamber, improving the overall yield and etching process by removing deposits without manual intervention.
Implementation Method 1
injecting a cleaning gas into the ion source chamber and ionizing the cleaning gas in the ion source chamber to generate first plasma
Implementation Method 2
ionizing the cleaning gas in the ion source chamber to generate first plasma
Implementation Method 3
ejecting a gaseous compound, which is generated through reaction between the first plasma and the deposits in the ion source chamber
Implementation Method 4
injecting an etching gas into the ion source chamber and ionizing the etching gas in the ion source chamber to generate second plasma
Implementation Method 5
ionizing the etching gas in the ion source chamber to generate second plasma
Implementation Method 6
Atoms in the to-be-etched material are sputtered under the bombardment, and are then pumped out by a vacuum pump
Implementation Method 7
plasma is accelerated by accelerating electrodes to bombard a to-be-etched material
Data Source
AI summary
A plasma treatment method, which is applied to a plasma treatment apparatus, wherein the plasma treatment apparatus comprises an ion source cavity (10), and sediment is present in the ion source cavity (10). The plasma treatment method comprises: introducing cleaning gas into an ion source cavity (10) for ionization to generate a first plasma, so that the first plasma reacts with sediment in the ion source cavity (10) to generate a gas compound, which is then discharged, thereby achieving the aim of cleaning the sediment in the ion source cavity (10).