Ion Source Shutter Assembly for 2D Implantation
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Solution Overview
Problem
Conventional ion sources require multiple units to create two-dimensional patterns on workpieces, leading to increased costs, maintenance, and space requirements, as they need to be scanned sequentially to achieve complex doping patterns.
Innovation Solution
An ion source with a shutter assembly positioned outside the arc chamber, allowing for the independent control of extraction apertures to create various ion beam patterns by blocking or allowing ion beams from multiple apertures, enabling the creation of two-dimensional patterns with a single ion source.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple ion sources are used to create two-dimensional patterns, then pattern complexity is improved, but device complexity and cost increase
Solution Approach 1:
The extraction plate is segmented into multiple extraction apertures (first, second, and third apertures) that can be independently controlled. Each aperture can extract ions in different directions, allowing a single ion source to generate multiple ion beams for creating complex two-dimensional patterns without requiring multiple separate ion sources.
Solution Approach 2:
The ion source incorporates movable shutters (first, second, and third shutters) that can dynamically block or unblock specific extraction apertures. This dynamic control allows selective activation of different apertures based on the desired pattern, enabling pattern switching and complexity without adding physical ion sources.
2Adaptability or versatility
If multiple ion sources are positioned in assembly line, then two-dimensional pattern capability is improved, but space requirements increase
Solution Approach 1:
Multiple extraction apertures and their control mechanisms are merged into a single ion source unit. The extraction plate contains multiple apertures that can be independently controlled by movable shutters, combining the functionality of what would traditionally require multiple separate ion sources into one compact device, thereby reducing floor space requirements.
Solution Approach 2:
The single ion source is designed with multi-functionality to perform the roles of multiple ion sources. By incorporating multiple extraction apertures with different orientations and movable shutters for selective blocking, one ion source can generate multiple ion beams in different directions, achieving universal pattern creation capability without requiring multiple dedicated ion sources.
3Adaptability or versatility
If multiple ion sources are used, then pattern diversity is improved, but maintenance requirements increase
Solution Approach 1:
The maintenance burden is reduced by merging multiple extraction aperture systems into a single ion source. Instead of maintaining multiple separate ion sources, the user maintains one ion source with multiple apertures controlled by movable shutters, simplifying maintenance while retaining the ability to create diverse patterns through selective aperture activation.
4Adaptability or versatility
If extraction plate is made movable to switch apertures, then pattern switching capability is improved, but plasma stability deteriorates
Solution Approach 1:
Instead of making the extraction plate movable to switch between apertures, the invention inverts the approach by keeping the extraction plate fixed and making the shutters movable. The movable shutters block or unblock fixed apertures, achieving pattern switching capability while maintaining plasma stability, as the extraction plate remains stationary within the plasma environment.
Data Source
AI summary
An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a shutter assembly positioned outside of the arc chamber proximate the extraction plate. The shutter assembly is configured to block at least a portion of one of the plurality of extraction apertures during one time interval. The ion source combined with relative movement of a workpiece to be treated with an ion beam extracted from the ion source enables a two dimensional ion implantation pattern to be formed on the workpiece using only one ion source.