Integrated Microwave Antenna for Ion Trap Qubit Control

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Solution Overview

Problem

Current ion trap designs face inefficiencies when using microwave radiation to excite hyperfine qubit transitions in trapped ions, as the magnetic field is partially canceled by induced currents in lower metallization layers, making it difficult to achieve microwave-induced atomic transitions.

Innovation Solution

An integrated microwave antenna is designed on the ion trap chip with a radiator formed by parallel, coplanar traces and slotted ground planes to suppress induced currents, ensuring a stronger magnetic field is maintained at the trap location.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If an integrated microwave antenna is used to excite hyperfine qubit transitions, then the efficiency of microwave-induced transitions is improved, but the magnetic field is partially canceled by induced currents in lower metallization layers

Engineering Contradiction:
Improveefficiency of microwave-induced transitionsVSAvoidinduced currents canceling magnetic field
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent extracts the harmful induced currents from the lower metallization layers by introducing elongated slots that interrupt the current paths. This removes the source of magnetic field cancellation while preserving the antenna's ability to generate the desired microwave magnetic field for qubit transitions.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The ground planes in the lower metallization layers are segmented into multiple regions separated by elongated slots. This segmentation breaks up the continuous current paths that would otherwise generate canceling magnetic fields, allowing the antenna to maintain a stronger net magnetic field at the trap location.

Inventive Principle:
Principle #1Segmentation

2Ease of operation

If the magnetic field strength is enhanced at the trap location, then the control of qubit states is improved, but the die area may increase

Engineering Contradiction:
Improvecontrol of qubit statesVSAvoiddie area
Core Design Contradiction:
Ease of operationVSArea of stationary object

Solution Approach 1:

The patent applies local quality by concentrating the magnetic field enhancement specifically at the ion trap location through strategic placement of the antenna and slot geometry. The elongated slots are oriented and positioned to suppress induced currents precisely where they would interfere with the trap, rather than uniformly modifying the entire chip structure.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The solution addresses the field cancellation problem by introducing a new dimensional feature - elongated slots extending in a specific direction through the metallization layers. This dimensional approach (creating slots that extend in a direction perpendicular to the radiator traces) provides a more effective method for suppressing induced currents compared to simple planar modifications.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively enhances the magnetic field strength at the ion trap location, allowing for more efficient microwave-induced transitions and improved control of qubit states without increasing die area.

Implementation Method 1

the magnetic field is partially canceled by induced currents in lower metallization layers, making it difficult to achieve microwave-induced atomic transitions

Methodology Applied
Scientific EffectElectromagnetic radiation: Electromagnetic Induction

Implementation Method 2

the magnetic field is partially canceled by induced currents in lower metallization layers

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Data Source

PatentUS10984976B1Microfabricated ion trap chip with an integrated microwave antenna
Publication Date: 2021.04.20 NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA LLC
  • US10984976B1 patent drawing
  • US10984976B1 patent drawing
  • US10984976B1 patent drawing

AI summary

An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.