Ion Trap Plate Layout for Uniform Wafer Plasma Processing
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Solution Overview
Problem
Current plasma processing apparatuses lack effective regulation of ion supply, leading to non-uniform plasma processing across the surface of wafers, which can result in inconsistent film deposition and processing outcomes.
Innovation Solution
A plasma processing apparatus is designed with a turntable, process gas supply nozzles, a plasma antenna, and an ion trap plate positioned to control the supply of ions generated by plasma, ensuring uniform plasma processing by adjusting the ion trap plate's position and configuration to regulate the plasma ion supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma processing is performed without ion supply regulation, then plasma processing can be conducted simply, but non-uniform plasma processing occurs across the wafer surface
Solution Approach 1:
The plasma processing apparatus is segmented into distinct functional zones: a plasma generation region where plasma is created, and a processing region where the substrate is treated. An ion trap plate is positioned between these regions to selectively regulate ion supply. This segmentation allows independent control of plasma generation and ion delivery, enabling uniform plasma processing across the wafer surface while maintaining reasonable structural complexity.
2Measurement precision
If ion trap plate is positioned to overlap plasma antenna, then ion supply can be regulated precisely, but device complexity increases
Solution Approach 1:
An ion trap plate is introduced as an intermediary component positioned between the plasma antenna and the substrate. This plate selectively traps and regulates ion supply to the processing region. By placing the ion trap plate at a position overlapping with the plasma antenna, precise control of ion distribution is achieved without requiring complex reconfiguration of the entire plasma generation system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for precise control of ion distribution, enhancing the uniformity of plasma processing across the wafer surface, improving the consistency and quality of film deposition and modification processes.
Implementation Method 1
A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle
Implementation Method 2
An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber
Data Source
AI summary
A plasma processing apparatus includes a process chamber. A turntable is disposed in the process chamber and is configured to receive a substrate along a circumferential direction thereof. A process gas supply nozzle is configured to supply a process gas to the turntable. A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle. An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber.