IPA Process Tank Inert Atmosphere for Oxidation-Free Drying
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Solution Overview
Problem
IPA oxidation at high temperatures leads to the formation of residues such as acetone, which cause defects in semiconductor wafers, reducing product yield due to unfiltered trace metal ions and organic impurities.
Innovation Solution
A process device and method using IPA with a shielding gas system that maintains an oxygen-free atmosphere, employing inert gases like nitrogen and reducing gases like hydrogen to prevent oxidation and reduce existing oxides.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-temperature IPA process is used for drying, then drying efficiency is improved, but IPA oxidation occurs producing residues that affect product yield
Solution Approach 1:
The patent applies inert atmosphere principle by introducing nitrogen gas into the IPA storage tank to displace oxygen and create an oxygen-free environment. This prevents IPA oxidation during storage and high-temperature drying processes, eliminating the formation of harmful residues like acetone while maintaining the high-temperature drying efficiency needed for multi-layer process layers with depth-width ratio up to 10:1
2Reliability
If IPA is stored at room temperature, then oxidation occurs slowly producing organic impurities, but trace metal ions remain unfiltered
Solution Approach 1:
The patent introduces nitrogen gas into the IPA storage tank to create an oxygen-free atmosphere, preventing both slow room-temperature oxidation that produces organic impurities and ensuring that trace metal ions remain in their original state without forming additional oxidation byproducts. This maintains IPA purity and reliability for semiconductor manufacturing
3Manufacturing precision
If oxygen is present in IPA storage, then oxidation reactions occur producing particles greater than 60 nm, but preventing oxidation requires complex filtration systems
Solution Approach 1:
The patent applies inert atmosphere principle by filling the IPA storage tank with nitrogen gas to eliminate oxygen presence. This prevents oxidation reactions that would produce particles greater than 60 nm, achieving precise particle size control without requiring complex filtration systems. The approach is particularly effective for preventing defects in semiconductor wafers during IPA drying processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents IPA oxidation, reducing impurity residues and particle pollution, thereby enhancing semiconductor wafer quality and yield by maintaining IPA in an oxygen-free environment.
Implementation Method 1
the shielding gas provides an oxygen-free atmosphere, thereby prevents the IPA from being oxidized
Implementation Method 2
the shielding gas at least comprises one or more reducing gases, which are used to reduce IPA oxides in the process tank
Data Source
AI summary
The present disclosure discloses a process device using IPA, which comprises: a process tank for storing IPA. The process tank comprises a first inlet and a second inlet. The first inlet is connected to an IPA supply through a first pipeline. The second inlet is connected to a shielding gas supply through a second pipeline; in the process tank, the shielding gas provides an oxygen-free atmosphere, thereby prevents the IPA from being oxidized. The present disclosure further discloses a process method using IPA. The present disclosure can prevent IPA from being oxidized, thereby can prevent residual impurities formed by IPA oxidation.