Substrate Cleaning Apparatus IPA Vapor Drying
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Solution Overview
Problem
In the process of drying wafers using supercritical fluids, a large number of particles adhere to the wafers, leading to reduced yield due to the accumulation of particles in the substrate processing apparatus.
Innovation Solution
A method involving a cleaning gas filling process using isopropyl alcohol (IPA) gas within the substrate processing apparatus, followed by an exhausting process to remove adsorbed particles, thereby reducing particle adhesion during the drying process with supercritical fluids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a substrate is dried using a supercritical fluid, then the drying efficiency is improved, but particles adhere to the substrate surface reducing yield
Solution Approach 1:
The patent applies preliminary action by introducing isopropyl alcohol vapor into the processing chamber before the substrate enters the supercritical fluid drying process. This pre-treatment saturates the environment with IPA vapor, creating a controlled atmosphere that prevents particle adhesion during subsequent drying operations, thereby maintaining high drying efficiency while eliminating the harmful particle adhesion effect
Solution Approach 2:
The patent uses isopropyl alcohol vapor as an intermediary substance between the substrate and the supercritical fluid environment. The IPA vapor acts as a mediator that modifies the interface conditions, preventing direct contact between particles and the substrate surface during the supercritical drying process, thus resolving the contradiction between efficient drying and particle-free surfaces
2Productivity
If the substrate processing apparatus is operated continuously, then productivity is improved, but particles accumulate in the apparatus
Solution Approach 1:
The patent implements continuity of useful action by establishing a continuous isopropyl alcohol vapor saturation system that operates throughout the entire substrate processing cycle. Rather than intermittent cleaning, the IPA vapor is continuously supplied to maintain a particle-free environment, enabling continuous high-productivity operation without particle accumulation in the apparatus
Solution Approach 2:
The system applies self-service by using the isopropyl alcohol vapor to automatically maintain a clean processing environment without requiring external intervention or separate cleaning cycles. The continuous presence of IPA vapor creates a self-cleaning atmosphere that prevents particle accumulation, allowing the apparatus to maintain productivity while automatically managing particle contamination
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively suppresses the adhesion of particles to wafers during the drying process, maintaining the yield and stability of the substrate processing apparatus.
Implementation Method 1
The exhausting process exhausts the cleaning gas from an inside of the substrate processing apparatus after the cleaning gas filling process
Implementation Method 2
a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid, thereby being dried
Data Source
AI summary
Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. The cleaning gas filling process fills a cleaning gas containing isopropyl alcohol in the substrate processing apparatus. The exhausting process exhausts the cleaning gas from an inside of the substrate processing apparatus after the cleaning gas filling process.