Integrated Passive Device Bump Structure for Thermal and Signal Routing
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Solution Overview
Problem
Modern semiconductor devices face challenges in miniaturization and thermal management due to increasing density, which existing packaging technologies struggle to address effectively, leading to inefficiencies in both thermal and electrical connectivity.
Innovation Solution
Incorporating an integrated passive device (IPD) within semiconductor devices, which provides additional connectivity and conditioning of signals, and is thermally and electrically connected through solder bumps to minimize z-height and enhance signal integrity, thereby improving both power delivery network (PDN) and thermal performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor device density is increased to meet miniaturization demands, then device integration and connectedness improve, but thermal density and heat dissipation challenges worsen
Solution Approach 1:
The patent transitions from planar thermal management to three-dimensional thermal pathways by implementing through-silicon vias (TSVs) that conduct heat vertically through the substrate. This dimensional change allows heat to be evacuated from high-density integrated circuits by routing thermal energy through the depth of the substrate rather than relying solely on surface-area-based dissipation, effectively managing thermal density in miniaturized high-density devices.
Solution Approach 2:
The patent introduces intermediary thermal management structures including heat sinks, heat spreaders, and thermal interface materials positioned between the heat-generating IC and the ambient environment. These intermediary elements facilitate efficient heat transfer by providing dedicated thermal pathways that decouple the thermal management function from the electrical interconnection function, allowing high-density devices to maintain acceptable operating temperatures.
2Productivity
If traditional packaging technologies are used to increase device density, then more devices can be integrated, but thermal management efficiency deteriorates
Solution Approach 1:
The patent implements multi-functional TSV structures that simultaneously serve electrical interconnection and thermal conduction purposes. By making the same vertical via structures perform both signal transmission and heat evacuation, the design achieves high device integration while maintaining efficient thermal management, eliminating the need for separate dedicated thermal pathways that would increase structural complexity.
Solution Approach 2:
The patent merges the electrical interconnection function and thermal management function into unified vertical pathways through the substrate. By combining these two previously separate functions into shared structural elements (TSVs with conductive liners), the design achieves space-efficient high-density integration while preserving effective thermal conduction, thereby improving overall thermal management efficiency in integrated device packages.
3Adaptability or versatility
If existing packaging approaches are employed, then device connectivity increases, but electrical and thermal connectivity performance becomes inefficient
Solution Approach 1:
The patent employs three-dimensional vertical interconnection through TSVs to replace traditional planar lateral connections. This dimensional transition provides direct through-substrate pathways for both electrical signals and thermal energy, reducing connection length and improving reliability by eliminating multiple lateral bonding interfaces that are prone to failure in high-density packages.
Solution Approach 2:
The patent utilizes composite material structures in TSV construction, combining conductive materials (copper, aluminum) for electrical interconnection with thermally conductive materials for heat management. This composite approach within the same vertical pathway simultaneously enhances both electrical connectivity and thermal conduction reliability, addressing the dual-function requirement of modern high-density integrated devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The IPD enhances semiconductor device performance by reducing terminal count, simplifying fan-out structures, and improving thermal dissipation, while maintaining or improving electrical connectivity, thus enabling smaller packages and more efficient power delivery.
Implementation Method 1
the passive device being thermally connected to the package substrate through the redistribution structure
Implementation Method 2
the passive device being electrically connected to the package substrate through the redistribution structure
Data Source
AI summary
A semiconductor device includes an integrated passive device coupled to a redistribution structure by a plurality of first bumps, and having a plurality of second bumps disposed opposite the plurality of first bumps, wherein the plurality of first and second bumps are thermally and/or electrically connected, and thus enable further thermal and/or electrical connections within or comprising the semiconductor device.