IPD Insulating Film Layout for Leak Current Suppression
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Solution Overview
Problem
Conventional Integrated Passive Devices (IPDs) experience leak currents between the substrate and interconnects, leading to potential separation issues.
Innovation Solution
The electronic device design includes a silicon oxide film positioned inside the perimeter of a silicon nitride film, with interconnects separated by the silicon oxide film, and optionally a dielectric film, to suppress leak currents and prevent separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an interconnect is directly connected to the substrate in conventional IPD, then the device complexity is reduced, but leak current occurs between the substrate and interconnect
Solution Approach 1:
A silicon oxide film is introduced as an intermediary layer between the substrate and the interconnect. This film acts as a mediator that prevents direct contact while maintaining electrical isolation, thereby suppressing leak current without significantly increasing device complexity. The silicon oxide film is formed using standard semiconductor fabrication processes, making it compatible with existing IPD manufacturing.
Solution Approach 2:
The space between the substrate and interconnect is segmented into multiple functional regions: a first region containing the silicon oxide film for leak current suppression, and a second region for other device components. This segmentation allows the leak current suppression function to be isolated and optimized without affecting the overall device structure.
2Reliability
If the silicon oxide film extends to the outer perimeter of the silicon nitride film, then leak current suppression is maximized, but separation occurs between the substrate and interconnect
Solution Approach 1:
The silicon oxide film is positioned with its outer perimeter inside the outer perimeter of the silicon nitride film, creating a local quality difference. This spatial arrangement ensures that the silicon oxide film provides leak current suppression in the critical area while avoiding contact with the substrate at the edges, thereby preventing separation and maintaining structural stability.
3Reliability
If the outer perimeter of the silicon oxide film is outside the silicon nitride film, then leak current path is blocked, but the interconnect comes into contact with the substrate
Solution Approach 1:
The problem is solved by transitioning to a planar dimension approach. By positioning the outer perimeter of the silicon oxide film inside the outer perimeter of the silicon nitride film in the planar view, the patent creates a two-dimensional spatial relationship that simultaneously achieves leak current suppression and prevents substrate-interconnect contact, avoiding the need for the silicon oxide film to extend beyond the nitride film boundaries.
Data Source
AI summary
An electronic device includes a substrate, a first silicon nitride film provided on the substrate, a silicon oxide film provided on the first silicon nitride film, a capacitor provided on the silicon oxide film, and an interconnect electrically connected to the capacitor. The interconnect is disposed apart from the first silicon nitride film. In a plan view, an outer perimeter of the silicon oxide film is inside an outer perimeter of the first silicon nitride film.