IPS LCD Aperture Ratio via Extended Pixel Electrode

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Solution Overview

Problem

Liquid crystal displays (LCDs) face challenges with poor lateral visibility and reduced response speed due to aperture ratio deterioration and high demand for backlight units with high brightness, especially in high-resolution and large-sized displays operating at high speeds.

Innovation Solution

A liquid crystal display structure featuring an insulating substrate with a gate electrode, oxide semiconductor layer, etch stopper, common electrode, source and drain electrodes, passivation layer, and pixel electrode, optimized for high transmission and high-speed driving operations, utilizing materials like zinc oxide and indium zinc oxide for enhanced mobility and reduced afterimages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If IPS mode LCD is used to achieve wide viewing angle, then lateral visibility is improved, but aperture ratio is deteriorated by common electrode

Engineering Contradiction:
Improveviewing angleVSAvoidaperture ratio
Core Design Contradiction:
Ease of manufactureVSArea of stationary object

Solution Approach 1:

The patent extracts the common electrode from the traditional IPS structure and replaces it with a pixel electrode that extends to the edge of the substrate. This removes the blocking effect of a separate common electrode while maintaining the wide viewing angle characteristics of IPS mode through the extended pixel electrode design.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent transitions from a planar electrode arrangement to a three-dimensional structure where the pixel electrode extends vertically along the substrate edge. This dimensional change allows the electrode to function both as a display element and as an edge-to-edge coverage structure, improving aperture ratio while maintaining viewing angle.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Illumination intensity

If high brightness backlight unit is used to compensate for aperture ratio deterioration, then brightness is improved, but power consumption increases

Engineering Contradiction:
ImprovebrightnessVSAvoidpower consumption
Core Design Contradiction:
Illumination intensityVSUse of energy by moving object

Solution Approach 1:

The patent changes the geometric parameters of the pixel electrode, extending it to the substrate edge to maximize the aperture ratio. This increases the effective display area and light transmission, allowing for lower backlight brightness and reduced power consumption while maintaining display quality.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If conventional semiconductor layer is used in high-speed driving operation, then manufacturing is simplified, but mobility characteristics are insufficient for 120 Hz or greater

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoiddriving speed
Core Design Contradiction:
Ease of manufactureVSSpeed

Solution Approach 1:

The patent employs a composite semiconductor structure combining amorphous silicon and crystalline silicon regions. The amorphous silicon provides ease of manufacture through standard LCD fabrication processes, while the crystalline silicon regions provide high carrier mobility necessary for high-speed driving operations at 120 Hz or greater.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS9484363B2Liquid crystal display and method of manufacturing the same
Publication Date: 2016.11.01 SAMSUNG DISPLAY CO LTD
  • US9484363B2 patent drawing
  • US9484363B2 patent drawing
  • US9484363B2 patent drawing

AI summary

A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.