Iridium Oxide p+ Layer for Ga2O3 High-Voltage Devices
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Solution Overview
Problem
Current methods for manufacturing p-type oxide semiconductors, such as those using Rh2O3 or ZnRh2O4, face challenges like low raw material density, difficulty in producing single crystals, and poor electrical characteristics, making it hard to apply them in high-voltage and high-power devices like LEDs and power semiconductor devices.
Innovation Solution
A semiconductor apparatus is developed with a crystalline p+ type oxide semiconductor layer containing iridium or its mixed crystals, integrated with an n-type semiconductor layer, utilizing a corundum structure and specific metal oxides like Ir2O3, which allows for improved semiconductor properties and wider band gaps, enabling effective use in high-voltage applications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Rh2O3 or ZnRh2O4 is used for p type semiconductors, then p type conductivity is achieved, but raw material density is thin during deposition and affects deposition quality
Solution Approach 1:
The patent changes the material parameter from Rh2O3/ZnRh2O4 to Ir2O3, which has higher raw material density and better deposition characteristics. This parameter change resolves the contradiction by maintaining p type conductivity while improving deposition quality through the superior physical properties of iridium oxide.
Solution Approach 2:
The patent replaces rare and difficult-to-handle rhodium-based materials with iridium oxide, which is more readily available and easier to process. This substitution maintains the functional requirement of p type conductivity while eliminating the manufacturing difficulties associated with rhodium materials.
2Reliability
If Rh2O3 is used for p type semiconductors, then p type conductivity is achieved, but it is difficult to produce Rh2O3 single crystals
Solution Approach 1:
The patent changes the material system from rhodium oxide to iridium oxide, which has fundamentally different crystallization behavior. Ir2O3 can be grown as high-quality single crystals using conventional techniques, resolving the manufacturing difficulty while maintaining the desired p type semiconductor properties.
3Reliability
If ZnRh2O4 is used for p type semiconductors, then p type conductivity is achieved, but mobility is low and band gaps are narrow
Solution Approach 1:
The patent changes the material composition from ZnRh2O4 to Ir2O3, which possesses superior electrical transport properties. Iridium oxide exhibits higher carrier mobility and wider band gap, simultaneously improving speed performance while maintaining p type conductivity for LED and power device applications.
4Reliability
If delafocyte or oxychalcogenide is used as p type semiconductor, then p type conductivity is achieved, but mobility is about 1 cm2/V·s or less and electrical characteristics are poor
Solution Approach 1:
The patent transitions from delafocyte/oxychalcogenide materials with mobility ≤1 cm2/V·s to Ir2O3 with significantly higher mobility. This parameter change in material selection resolves the contradiction by achieving both reliable p type conductivity and superior electrical characteristics suitable for high-performance devices.
5Reliability
If pn coupling with n type next-generation dioxide semiconductors such as α-Ga2O3 is attempted with delafocyte or oxychalcogenide, then p type conductivity is achieved, but pn coupling cannot be realized
Solution Approach 1:
The patent changes the material system to Ir2O3, which exhibits compatible lattice structure and energy band alignment with n type Ga2O3. This enables successful pn coupling and heterostructure formation, resolving the contradiction by achieving both p type conductivity and adaptability for integrated device designs.
Data Source
AI summary
The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus including at least an n type semiconductor layer and a p+ type semiconductor layer, wherein the n type semiconductor layer includes a crystalline oxide semiconductor (gallium oxide, for example) containing a metal of Group 13 of the periodic table as a main component, and the p+ type semiconductor layer includes a crystalline oxide semiconductor (iridium oxide, for example) containing a metal of Group 9 of the periodic table as a main component.