Irregular Transistor Simulation via Equivalent Rectangular Mapping

Solution Overview

Problem

Current electronic design automation tools, such as SPICE, are inefficient in simulating integrated circuits with irregular shaped transistor devices, as they are optimized for regular shaped devices, leading to suboptimal chip area usage and susceptibility to electromagnetic radiation.

Innovation Solution

A method and system that identifies irregular shaped transistor devices in integrated circuits, determines their equivalent resistance and width, and represents them as regular shaped devices during simulation, using solver programs to calculate these parameters and enable accurate simulation and verification.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If regular shaped transistor devices are used in integrated circuits, then simulation and analysis can be performed using standard tools, but chip area usage is inefficient and susceptibility to electromagnetic radiation increases

Engineering Contradiction:

Improvesimulation capabilityVSAvoidchip area

Core Design Contradiction:

Ease of manufactureVSArea of stationary object

Solution Approach 1:

The patent creates an equivalent regular-shaped transistor device that copies the electrical characteristics of the irregular-shaped device. By calculating equivalent parameters (width, length, resistance) from the irregular shape's geometry and electrical properties, a standard rectangular transistor model is generated that behaves identically in simulation, enabling use of conventional simulation tools while maintaining electrical equivalence

Inventive Principle:

Principle #26Copying

Solution Approach 2:

The patent transforms the irregular-shaped transistor device into an equivalent regular-shaped device by calculating and adjusting key parameters such as channel width, channel length, and resistance. The equivalent parameters are derived from the irregular geometry's electrical characteristics, allowing the regular-shaped device to replicate the irregular device's electrical behavior while occupying optimized chip area

Inventive Principle:

Principle #35Parameter changes

2Ease of manufacture

If regular shaped transistor devices are used in integrated circuits, then standard simulation tools can be applied, but susceptibility to electromagnetic radiation increases

Engineering Contradiction:

Improvesimulation capabilityVSAvoidelectromagnetic radiation susceptibility

Core Design Contradiction:

Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent creates an equivalent regular-shaped transistor device that copies the electrical characteristics of the irregular-shaped device. By calculating equivalent parameters (width, length, resistance) from the irregular shape's geometry and electrical properties, a standard rectangular transistor model is generated that behaves identically in simulation, enabling use of conventional simulation tools while maintaining electrical equivalence

Inventive Principle:

Principle #26Copying

Solution Approach 2:

The patent acknowledges that irregular-shaped devices provide better electromagnetic radiation immunity compared to regular-shaped devices. The solution allows designers to use irregular shapes in the actual layout while creating equivalent regular-shaped models for simulation, or to optimize the irregular shape's geometry to achieve both immunity and simulation compatibility

Inventive Principle:

Principle #4Asymmetry

3Area of stationary object

If irregular shaped transistor devices are used to optimize chip area, then real estate usage improves, but accurate simulation becomes difficult with standard tools

Engineering Contradiction:

Improvechip areaVSAvoidsimulation capability

Core Design Contradiction:

Area of stationary objectVSEase of manufacture

Solution Approach 1:

The patent creates an equivalent regular-shaped transistor device that copies the electrical characteristics of the irregular-shaped device. By calculating equivalent parameters (width, length, resistance) from the irregular shape's geometry and electrical properties, a standard rectangular transistor model is generated that behaves identically in simulation, enabling use of conventional simulation tools while maintaining electrical equivalence

Inventive Principle:

Principle #26Copying

Solution Approach 2:

The patent transforms the irregular-shaped transistor device into an equivalent regular-shaped device by calculating and adjusting key parameters such as channel width, channel length, and resistance. The equivalent parameters are derived from the irregular geometry's electrical characteristics, allowing the regular-shaped device to replicate the irregular device's electrical behavior while occupying optimized chip area

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS10846451B1Methods of modelling irregular shaped transistor devices in circuit simulation

Publication Date: 2020.11.24 FRONTGRADE COLORADO SPRINGS LLC

AI summary

This application is directed to methods and systems of verifying integrated circuit including an irregular shaped transistor device. The irregular shaped transistor device has a gate, a source, a drain, and a first channel connecting the source and drain and having an irregular shape. An equivalent resistance of the first channel is determined based on the irregular shape of the first channel. A length of the first channel is determined optionally based on locations of the source and drain. An equivalent width of the first channel of the irregular shaped transistor device is determined based on the equivalent resistance and length of the first channel, thereby enabling representation of the irregular shaped transistor device, by a regular shaped transistor device having a second channel, in analysis of the integrated circuit. The second channel optionally has a rectangular shape measured by the equivalent width and the length of the first channel.