Irreversible Memory Cell Security via Segmented Switch Control

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Solution Overview

Problem

Existing memories, particularly irreversibly programmable ones, lack effective protection against unauthorized data access, especially after they become 'dead' memories, and generators of physically unclonable functions do not adequately secure data against such threats.

Innovation Solution

The implementation of a device with multiple memory cells connected through doped semiconductor areas and switches, where each cell has a unique programming mechanism involving a conductive track and transistor gates, ensuring that only one memory point is programmable at a time, and using a common conductive area to enhance security by making it difficult for attackers to distinguish between memory points.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If irreversibly programmable memory cells are used, then data protection against unauthorized access is improved, but the memory becomes inaccessible after programming (dead memory state)

Engineering Contradiction:
Improvedata protectionVSAvoiddata accessibility
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The memory is divided into multiple independent memory cells (at least three), each with its own switch and doped semiconductor area. This segmentation allows the system to maintain data protection through irreversible programming while enabling selective access to individual cells through the switch mechanism, preventing the entire memory from becoming completely inaccessible.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces switches that can dynamically control the state of individual memory cells. The switches are coupled to doped semiconductor areas and can be selectively activated or deactivated, allowing the memory system to transition between protected (dead memory) and accessible states on demand, thus resolving the contradiction between permanent protection and operational accessibility.

Inventive Principle:
Principle #15Dynamics

2Ease of manufacture

If multiple memory cells are connected through common doped semiconductor areas, then manufacturing complexity is reduced, but it becomes harder to distinguish between individual memory points for security purposes

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidmemory point distinguishability
Core Design Contradiction:
Ease of manufactureVSDifficulty of detecting and measuring

Solution Approach 1:

The patent introduces switches as intermediary elements between the common doped semiconductor areas and the memory cells. These switches act as mediators that provide individual control and identification for each memory cell while sharing the common doped semiconductor infrastructure, thus maintaining both manufacturing simplicity and security distinguishability.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

While the doped semiconductor areas are common and shared across multiple memory cells (providing manufacturing ease), each memory cell is equipped with its own switch with unique control characteristics. This local differentiation through switches allows individual memory points to be distinguished and controlled independently despite sharing common infrastructure.

Inventive Principle:
Principle #3Local quality

3Reliability

If only one memory point is programmable at a time, then security against unauthorized access is enhanced, but programming time for the entire memory increases

Engineering Contradiction:
Improvesecurity protectionVSAvoidprogramming time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent enables sequential programming of memory cells through periodic activation of switches. Each memory cell can be programmed in turn by activating its associated switch at specific time intervals, allowing the system to maintain the security benefit of one-at-a-time programming while efficiently completing the programming of multiple cells through systematic time-based control.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The switches are pre-configured and coupled to their respective memory cells and doped semiconductor areas before programming begins. This preliminary setup allows for rapid sequential programming by simply activating the appropriate switch for each cell in sequence, minimizing the overall programming time while maintaining security through controlled individual access.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution significantly enhances data protection by ensuring that only one memory point is programmed at a time, making it harder for unauthorized access and providing a higher level of security against data breaches, even in 'dead' memory states.

Implementation Method 1

First doped semiconductor zones connect the first areas together

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

each switch comprises a transistor comprising a gate, the gates being disjunct and having collinear elongated shapes

Methodology Applied
Scientific EffectElectrical conductivity modulation: Conduction (electrical)

Implementation Method 3

each cell comprises one or more irreversibly programmable memory points, each comprising a second semiconductor zone and a gate located on the second zone

Methodology Applied
Scientific EffectIrreversible programming:

Data Source

PatentUS11621051B2Electronic chip memory
Publication Date: 2023.04.04 STMICROELECTRONICS FRANCE
  • US11621051B2 patent drawing
  • US11621051B2 patent drawing
  • US11621051B2 patent drawing

AI summary

A device includes a first switch, a first irreversibly programmable memory point, and a second irreversibly programmable memory point coupled in parallel with the first irreversibly programmable memory point. The first switch and the parallel combination of the first and second irreversibly programmable memory points are coupled in series between a first node and a second node.