Isolated Backside Contact Layout for Semiconductor Reliability Testing
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Solution Overview
Problem
Current transistor architectures fail to independently evaluate the reliability of backside contacts and placeholders due to their close proximity, leading to potential shorting and reduced device lifetime, and lack rigorous methods for reliability qualification.
Innovation Solution
The implementation of an isolated backside contact and placeholder structure in semiconductor devices, utilizing interlayer dielectrics and shallow trench isolations to prevent direct electrical connections, allowing for independent reliability assessment and verification across the backside power delivery network.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If backside contact and placeholder are placed in close proximity to save space, then device area is reduced, but reliability deteriorates due to potential shorting
Solution Approach 1:
The patent divides the backside contact structure into multiple isolated contact regions separated by dielectric layers. Each contact region is electrically isolated from others through intermediate dielectric layers, allowing close proximity placement while preventing shorting. This segmentation enables high-density integration without compromising reliability.
Solution Approach 2:
The patent introduces intermediate dielectric layers between adjacent backside contacts and placeholders. These dielectric layers act as mediators that electrically isolate neighboring structures, preventing direct electrical connection and potential shorting while allowing the structures to be placed in close proximity for area efficiency.
2Device complexity
If backside contact and placeholder are directly connected to share structure, then manufacturing complexity is reduced, but measurement precision deteriorates due to inability to independently evaluate reliability
Solution Approach 1:
The patent segments the electrical connection paths by introducing dielectric isolation layers between backside contacts and placeholders. This segmentation creates independent electrical domains that can be individually tested and evaluated, enabling precise reliability measurement of each component without interference from neighboring structures.
Solution Approach 2:
The patent applies different dielectric materials and isolation structures at different locations within the device. Specific regions between contacts and placeholders receive enhanced dielectric isolation, while other regions maintain direct connections. This local differentiation enables both independent reliability evaluation and efficient manufacturing.
3Reliability
If dielectric isolation layers are added between backside contact and placeholder, then reliability is improved by preventing shorting, but device complexity increases
Solution Approach 1:
The patent implements dielectric isolation layers at specific critical interfaces between backside contacts and placeholders, rather than throughout the entire device. This selective segmentation provides necessary electrical isolation to prevent shorting while minimizing the overall increase in device complexity.
Solution Approach 2:
The patent applies dielectric isolation materials with specific properties at particular locations where shorting risk exists, while other regions maintain simpler structures. This localized application of quality enhancement achieves reliability improvement without uniformly increasing device complexity across all regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the reliability and integrity of semiconductor devices by preventing shorting and enabling effective reliability qualification, ensuring stable operation over the device's lifetime and improving performance through independent control of individual transistors.
Implementation Method 1
a backside interlayer dielectric (BILD) below the plurality of gates... The BILD isolates the placeholder and the backside contact from directly connecting to each other
Implementation Method 2
a shallow trench isolation (STI) within the BILD and over the backside contact... the STI isolates the backside contact form direct contact with a gate and the ILD
Data Source
AI summary
A semiconductor device includes a plurality of gate separated by an interlayer dielectric (ILD), a backside contact. The backside contact is extended below the plurality of gates and a dielectric layer, and from a first gate to a second gate of the plurality of gates, and a placeholder. The placeholder is extended below the plurality of gates and between the second gate and a third gate of the plurality of gates. The backside contact and the placeholder are not directly electrically connected.