Integrated High Voltage Isolation Capacitor with Segmented Dielectric
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Solution Overview
Problem
Existing integrated high voltage isolation capacitors face challenges in meeting varying withstand voltage requirements and have manufacturing complexities due to the dependence of dielectric layer thickness on the number of metal layers in the wiring layer, leading to increased costs and process difficulties.
Innovation Solution
The design includes an integrated high voltage isolation capacitor with a dielectric structure layer that does not cover the bonding part of the wiring layer, allowing for adjustable thickness to meet different withstand voltage requirements, using materials like silicon dioxide and photosensitive polyimide in single, double, or triple-layer structures, and manufacturing methods that simplify the process and reduce costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the dielectric layer thickness is increased to improve withstand voltage performance, then the withstand voltage value is improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The dielectric layer is segmented into multiple independent dielectric layers (first dielectric layer, second dielectric layer, third dielectric layer) with different materials and functions. This segmentation allows each layer to be optimized independently for specific voltage blocking requirements, improving overall withstand voltage performance while maintaining manageable manufacturing complexity through modular construction
Solution Approach 2:
The patent employs composite dielectric materials including silicon dioxide, silicon nitride, and polyimide in different layers. This composite material approach enables each layer to contribute different electrical and mechanical properties, achieving high withstand voltage performance through material diversity rather than simply increasing the thickness of a single material layer
2Reliability
If the dielectric layer thickness is increased to improve withstand voltage performance, then the withstand voltage value is improved, but the manufacturing cost increases
Solution Approach 1:
The patent changes the material parameters of the dielectric layers rather than simply increasing thickness. By selecting materials with different dielectric strengths and breakdown voltages (silicon dioxide, silicon nitride, polyimide), the design achieves high withstand voltage performance through material parameter optimization, avoiding the need for excessive thickness that would increase manufacturing cost
Solution Approach 2:
The dielectric layers are applied selectively in specific regions where voltage blocking is required, rather than uniformly across the entire device. The first dielectric layer is formed in a first region, the second dielectric layer in a second region, and the third dielectric layer in a third region, allowing material and process optimization only where necessary for voltage isolation
3Reliability
If the dielectric layer covers the bonding part of the wiring layer to improve isolation, then the isolation performance is improved, but the ease of manufacture decreases
Solution Approach 1:
The dielectric layers are applied locally in specific regions rather than covering the entire wiring layer. The first dielectric layer is formed in a first region, the second dielectric layer in a second region, and the third dielectric layer in a third region. This local quality approach provides isolation performance exactly where needed while leaving bonding areas accessible for wire bonding operations
Solution Approach 2:
The dielectric layers serve as intermediary structures that provide electrical isolation between different wiring layers without interfering with the bonding process. By positioning the dielectric layers in specific regions and using materials with appropriate properties, the patent achieves isolation functionality while maintaining compatibility with subsequent wire bonding operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for flexible adjustment of withstand voltage values without affecting the number of metal layers, simplifying the manufacturing process, reducing costs, and ensuring compatibility with various wiring layers, thus addressing the limitations of existing technologies.
Implementation Method 1
a dielectric structure layer... sequentially disposed in a stacked manner
Data Source
AI summary
An integrated high voltage isolation capacitor and a digital capacitive isolator are provided. The integrated high voltage isolation capacitor includes: a substrate and a semiconductor component; a wiring layer located on one side of the substrate and the semiconductor component, where the wiring layer has a bonding part; and an isolation capacitor unit located on one side that is of the wiring layer and that faces away from the substrate and the semiconductor component, where a vertical projection of the isolation capacitor unit on the substrate and the semiconductor component does not overlap with a vertical projection of the bonding part on the substrate and the semiconductor component. In a direction in which the substrate and the semiconductor component point to the wiring layer, the isolation capacitor unit includes a bottom electrode plate, a dielectric structure layer, and a top electrode plate that are disposed in a stacked manner.