Galvanically Isolated Die Stack With Wireless Power Transfer

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Solution Overview

Problem

Existing semiconductor device packaging technologies struggle to provide effective galvanic isolation between IC dies operating at different supply voltages, which is essential for protecting low voltage dies from high voltage dies and preventing electrical overstress damage.

Innovation Solution

A semiconductor device is designed with a low voltage domain semiconductor die, a communication device, and a high voltage domain semiconductor die, where the communication device and the low voltage die are stacked with an isolation barrier in between, enabling wireless communication and power transfer across the barrier, while maintaining galvanic isolation between the high and low voltage dies.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If direct electrical connection is made between IC dies operating at different supply voltages, then communication and power transfer between dies is enabled, but electrical overstress damage can occur to low voltage dies from high voltage dies

Engineering Contradiction:

Improveprotection from electrical overstressVSAvoidgalvanic isolation requirement

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a communication device as an intermediary component between the high voltage die and low voltage die. This communication device includes a barrier that provides galvanic isolation, allowing wireless communication and power transfer while preventing direct electrical connection. The intermediary enables the system to achieve both communication functionality and electrical isolation simultaneously.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces direct electrical (galvanic) connection with wireless communication through electromagnetic fields. The communication device transmits signals and power wirelessly across the barrier, substituting the mechanical/electrical direct connection with a field-based transmission mechanism that inherently provides galvanic isolation.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If isolation barrier is introduced between semiconductor dies, then galvanic isolation and protection are achieved, but wireless communication and power transfer across the barrier become necessary

Engineering Contradiction:

Improvegalvanic isolationVSAvoidstacked configuration with communication device

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines multiple functions into a single communication device component. The communication device simultaneously provides wireless communication capability, power transfer capability, and galvanic isolation through its barrier structure. This merging reduces the need for separate components for each function, thereby managing device complexity while achieving the required isolation.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent transitions from planar electrical connection to three-dimensional stacked configuration with wireless communication. By moving to another dimension (spatial stacking with vertical barrier), the system achieves galvanic isolation while maintaining functional connectivity through electromagnetic fields in the third dimension.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides fault-tolerant galvanic isolation, ensuring that if the high voltage die is damaged by an electrical overstress event, the low voltage die remains electrically isolated, preventing damage and ensuring system reliability.

Implementation Method 1

The communication device and the semiconductor die are configured to wirelessly (e.g., inductively, capacitively) communicate and/or transfer power with one another across the isolation barrier

Methodology Applied

Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 2

The communication device and the semiconductor die are configured to wirelessly (e.g., inductively, capacitively) communicate and/or transfer power with one another across the isolation barrier

Methodology Applied

Scientific EffectElectromagnetic coupling: Electromagnetic Induction

Data Source

PatentUS12347753B2Semiconductor device having galvanic isolation and method therefor

Publication Date: 2025.07.01 NXP USA INC

AI summary

A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package leadframe having a first die pad and a second die pad separated from the first die pad. A first semiconductor die is attached to the first die pad of the package leadframe. A second semiconductor die is attached to the second die pad of the package leadframe. A communication device is attached over the second semiconductor die. The communication device is configured to communicate wirelessly with the second semiconductor die.