Isolated Dummy Fin Fabrication via Selective Oxidation
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Solution Overview
Problem
The challenge in forming Field Effect Transistors (FETs) is to maintain a tight fin pitch while converting selected vertical fins to inactive insulating material without increasing the fin pitch, as existing methods face difficulties in scaling down device components and efficiently managing the electrical functionality of fins.
Innovation Solution
A method is developed to form active and inactive vertical fins on a substrate by converting semiconductor vertical fins to insulating material through oxidation, maintaining the same fin pitch by using a protective liner and filler layers, and selectively removing the liner to render specific fins inactive without physically removing them from the array.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If selected vertical fins are converted to inactive insulating material by physically removing them, then the electrical functionality is managed, but the fin pitch increases and scaling down becomes difficult
Solution Approach 1:
The patent extracts the semiconductor material from selected fins through oxidation, converting them to insulating material while maintaining the physical fin structure. This allows electrical functionality to be managed without physically removing fins or increasing pitch
Solution Approach 2:
The patent changes the material parameter of selected fins from conductive semiconductor material to insulating oxide material through oxidation. This parameter change disables electrical functionality while maintaining the same fin pitch and physical structure
2Productivity
If device dimensions are scaled down, then higher integration is achieved, but forming individual components and electrical contacts becomes more difficult
Solution Approach 1:
The patent applies a protective liner to fins that will remain active, and selectively removes it from fins to be converted to inactive. This preliminary action enables precise control of the oxidation process, making scaled-down fabrication more manageable
Solution Approach 2:
The patent introduces a protective liner as an intermediary layer that controls access to the fin surface. By selectively removing the liner and applying oxidation, the process becomes more controllable at scaled dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient conversion of active fins to inactive fins within the same pitch, addressing scaling issues and maintaining the positive aspects of traditional FET structures, enabling the formation of complementary metal oxide silicon (CMOS) transistors and digital gate devices without the need for fin-cut processes or increased pitch.
Implementation Method 1
converting selected vertical fins to inactive insulating material (e.g., oxidation)
Data Source
AI summary
A method of forming an arrangement of active and inactive fins on a substrate, including forming at least three vertical fins on the substrate, forming a protective liner on at least three of the at least three vertical fins, removing at least a portion of the protective liner on the one of the at least three of the at least three of vertical fins, and converting the one of the at least three of the at least three vertical fins to an inactive vertical fin.