Isolated Temperature Sensor Device for High Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor temperature sensors face failures due to dielectric breakdown when exposed to high voltages, necessitating electrical isolation while maintaining thermal coupling, which existing technologies struggle to achieve effectively.
Innovation Solution
A semiconductor die package with a temperature sensor is designed, featuring a high voltage ring and conductive vias within dielectric material layers to create an electrically isolated low voltage zone, allowing the temperature sensor to operate without being directly exposed to high voltage electric fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the temperature sensor is directly exposed to high voltage for temperature sensing in high voltage applications, then the temperature sensing capability is improved, but dielectric breakdown occurs causing sensor failure
Solution Approach 1:
The patent segments the electrical environment by creating distinct voltage zones through multiple metallization layers and dielectric structures. The temperature sensor is placed in an isolated low voltage zone (formed by metallization layers 4271-4277 and dielectric layers 4251-4257) while the substrate operates at high voltage, allowing the sensor to function without exposure to high voltage stress
Solution Approach 2:
The patent introduces an intermediary isolation structure consisting of conductive vias and dielectric material that mediates between the high voltage substrate and the low voltage temperature sensor. This isolation structure acts as a buffer that prevents direct electrical contact while maintaining thermal coupling for temperature sensing
2Reliability
If electrical isolation structures are added to protect the temperature sensor from high voltage, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges the electrical isolation function with the existing metallization layers (4271-4277) and dielectric layers (4251-4257) that are already part of the semiconductor device structure. By integrating the isolation structure into the standard fabrication process and existing layers, the patent achieves electrical protection without adding separate complex isolation components
Solution Approach 2:
The metallization layers and dielectric material serve multiple functions: they provide electrical isolation for the temperature sensor, maintain structural integrity of the device, and support the standard semiconductor fabrication process. This multi-functionality reduces the need for additional specialized isolation components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively isolates the temperature sensor from high voltage electric fields, preventing dielectric breakdown and enabling reliable temperature sensing in high voltage environments.
Implementation Method 1
successive metallization layers stacked over the active surface of the semiconductor die... comprising a respective conductor layer in a dielectric material... electrical connections couple the bond pads to the second lead and to the third lead
Data Source
AI summary
In a described example, an apparatus includes: a package substrate including a die pad configured for mounting a semiconductor die, a first lead connected to the die pad, and a second lead and a third lead; and a semiconductor die including a temperature sensor mounted on the die pad. The semiconductor die includes a first metallization layer being a metallization layer closest to the active surface of the semiconductor die, and successive metallization layers overlying the previous metallization layer, the metallization layers including a respective conductor layer in a dielectric material for the particular metallization layer and conductive vias; and the temperature sensor formed of the conductor layer in an uppermost metallization layer and coupled to the second lead and to the third lead. The semiconductor die includes a high voltage ring formed in the uppermost metallization layer, spaced from and surrounding the temperature sensor.