Isolated Semiconductor Well Detection for DFA and Substrate Thinning

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Solution Overview

Problem

Integrated circuits face challenges in detecting substrate thinning from the rear face and Differential Fault Analysis (DFA) attacks, which can compromise their security and functionality.

Innovation Solution

A method and integrated circuit design that incorporates a second semiconductor well insulated from the first well, with a detection device capable of detecting substrate thinning by measuring electrical resistance and fault injection, allowing for simultaneous protection against both threats without interfering with the components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a separate detection device for substrate thinning is implemented, then detection capability is improved, but device complexity and surface area increase

Engineering Contradiction:
Improvesubstrate thinning detection capabilityVSAvoiddetection device structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines substrate thinning detection and DFA attack detection into a single integrated detection device formed in the second semiconductor well. This merging of functions reduces device complexity and surface area while maintaining both detection capabilities through unified measurement of current flow in the isolated well

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The detection device in the second semiconductor well serves multiple functions: it detects both substrate thinning attacks and DFA attacks by monitoring current flow. This multi-functional approach eliminates the need for separate detection devices, reducing overall system complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Area of stationary object

If the detection device is placed close to components, then surface area is reduced, but interference effects from components increase

Engineering Contradiction:
Improvedetection device surface areaVSAvoidinterference from circuit components
Core Design Contradiction:
Area of stationary objectVSObject-affected harmful factors

Solution Approach 1:

The detection device is extracted into an isolated second semiconductor well that is electrically separated from the first semiconductor well containing the circuit components. This spatial and electrical separation removes interference from components while keeping the detection device within the integrated circuit structure

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces an intermediate isolated well structure that acts as a mediator between the circuit components and the detection function. This intermediate structure provides electrical isolation through the substrate, blocking interference from components while allowing the detection device to function

Inventive Principle:
Principle #24Intermediary (Mediator)

3Measurement precision

If components are disabled during detection, then detection accuracy is improved, but productivity and ease of operation deteriorate

Engineering Contradiction:
Improvedetection accuracyVSAvoidoperational efficiency
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The detection device is extracted into an isolated second well that is electrically separated from the circuit components. This isolation allows continuous operation of components during detection without interference, eliminating the need to disable components and maintaining full productivity

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively detects substrate thinning and DFA attacks, reducing the surface area requirements and avoiding interference from integrated circuit components, thereby enhancing security and efficiency.

Implementation Method 1

detecting a thinning of the substrate via its rear face by a detection of the absence of current flowing in the second well

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Implementation Method 2

in the case of detection of a non-thinning of the substrate, detecting a DFA attack by the detection of the flow of a current flowing in the second well

Methodology Applied
Scientific EffectElectrical Conduction: Conduction (electrical)

Data Source

PatentUS11942440B2Method for detecting a differential fault analysis attack and a thinning of the substrate in an integrated circuit, and associated integrated circuit
Publication Date: 2024.03.26 STMICROELECTRONICS (ROUSSET) SAS
  • US11942440B2 patent drawing
  • US11942440B2 patent drawing
  • US11942440B2 patent drawing

AI summary

An integrated circuit includes a semiconductor substrate having a rear face. A first semiconductor well within the substrate includes circuit components. A second semiconductor well within the substrate is insulated from the first semiconductor well and the rest of the substrate. The second semiconductor well provides a detection device that is configurable and designed to detect a DFA attack by fault injection into the integrated circuit.