Isolation Capacitor Structure for Low-Breakdown Voltage Domains
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Solution Overview
Problem
Multi-chip modules face issues with high electric fields causing low voltage breakdown due to standalone isolation capacitors, and adding thick dielectrics for isolation increases cost and wafer bow during manufacturing.
Innovation Solution
Incorporating a lower-bandgap dielectric layer between the semiconductor layer and the capacitor plate, along with series-connected capacitors, mitigates voltage breakdown while reducing cost and wafer bow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thick dielectric layer is added below the bottom capacitor plate to isolate it from the substrate, then voltage breakdown is prevented, but manufacturing cost increases and wafer bow is exacerbated
Solution Approach 1:
The patent changes the material parameter (bandgap energy) of the dielectric layer to achieve better electrical isolation. By using a material with lower bandgap energy (such as silicon carbide or silicon nitride) instead of increasing thickness, the patent prevents voltage breakdown without incurring the manufacturing penalties of thick dielectric layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces voltage breakdown and maintains electrical isolation between high and low voltage domains, improving the reliability and cost-effectiveness of multi-chip modules.
Implementation Method 1
The high voltage can lead to a high electric field on the bottom plate that causes low voltage breakdown of the device
Implementation Method 2
the lower-bandgap dielectric layer has a bandgap energy less than a bandgap energy of the first dielectric layer
Implementation Method 3
The first and second capacitor plates are spaced apart from one another along an orthogonal third direction to form a first capacitor
Data Source
AI summary
An electronic device includes a first dielectric layer above a semiconductor layer, lower-bandgap dielectric layer above the first dielectric layer, the lower-bandgap dielectric layer having a bandgap energy less than a bandgap energy of the first dielectric layer, a first capacitor plate above the lower-bandgap dielectric layer in a first plane of first and second directions, a second dielectric layer above the first capacitor plate, a second capacitor plate above the second dielectric layer in a second plane of the first and second directions, the first and second capacitor plates spaced apart from one another along a third direction, and a conductive third capacitor plate above the second dielectric layer in the second plane, the third capacitor plate spaced apart from the second capacitor plate in the second plane.