Isolation Structure Across GAA Nanostructures for Reliable Scaling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor manufacturing is forming reliable semiconductor devices at increasingly smaller sizes, as the scaling-down process complicates processing and manufacturing due to decreased feature sizes.
Innovation Solution
The process involves forming a semiconductor device structure with fin structures and gate all around (GAA) transistor structures, using photolithography and self-aligned processes for patterning, and employing sacrificial layers and epitaxial growth to create channel structures and source/drain structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes are decreased to increase functional density, then productivity and cost efficiency are improved, but manufacturing complexity and processing difficulty increase
Solution Approach 1:
The semiconductor device is divided into multiple fins extending from the substrate, with each fin providing a separate current path. This segmentation allows the device to maintain larger effective channel dimensions while fitting within a smaller planar footprint, thereby increasing functional density without proportionally increasing manufacturing complexity
Solution Approach 2:
The invention transitions from a planar 2D channel structure to a 3D vertical fin structure. Multiple fins extend vertically from the substrate surface, utilizing the third dimension to increase the total channel area and functional density without requiring proportional increases in lithographic feature size control
2Area of stationary object
If feature sizes are decreased to increase functional density, then chip area utilization is improved, but fabrication process reliability deteriorates
Solution Approach 1:
The channel region is segmented into multiple discrete fins rather than using a single planar channel. This segmentation allows each fin to be formed with more relaxed dimensional tolerances while collectively providing the required total channel area, improving fabrication reliability
Solution Approach 2:
By extending channels vertically into multiple fins, the invention increases the effective channel area without requiring smaller lithographic features. The fin height and spacing can be controlled with standard process capabilities, maintaining fabrication reliability while improving chip area utilization
3Productivity
If functional density is increased by scaling down, then production efficiency is improved, but processing difficulty increases
Solution Approach 1:
The device structure is segmented into multiple fins that can be formed using standard photolithography and etching processes. Each fin acts as an independent processing unit that can be manufactured with existing tooling, avoiding the need for advanced lithographic techniques while maintaining high functional density
Solution Approach 2:
The invention exploits the vertical dimension to increase functional density without requiring smaller lateral features. Fin height, width, and spacing can be controlled with conventional process capabilities, making the structure easier to manufacture than planar devices with equivalent functional density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of reliable semiconductor devices with improved operational speed and reliability by effectively managing the complexity of smaller feature sizes and reducing current leakage and parasitic capacitance.
Implementation Method 1
a gate stack that extends across the semiconductor fin and that wraps around each of the semiconductor nanostructures
Implementation Method 2
an isolation structure that is between the semiconductor fin and the substrate
Implementation Method 3
a first epitaxial structure and a second epitaxial structure that sandwich the semiconductor nanostructures
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes multiple semiconductor nanostructures and a gate stack wrapped around the semiconductor nanostructures. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching one or more of the semiconductor nanostructures. The semiconductor device structure further includes an isolation structure continuously extending across edges of the semiconductor nanostructures.