Isolation-Region Gate Bars for Stable GAA Gate Layouts

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Solution Overview

Problem

The challenge in integrated circuit manufacturing lies in preventing peeling, collapsing, and bending of gates in non-active region areas, particularly in isolation regions, which can lead to structural instability and electrical shorting during the fabrication of complex gate-all-around transistors.

Innovation Solution

The implementation of gate support structures, such as gate bars, connected to multiple gates in non-active regions, which are disposed on substrate isolation structures and extend along a different direction than the gates, providing structural support and minimizing the risk of electrical shorting and residue defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If gate support structures are added to non-active regions, then structural stability of gates is improved, but device complexity increases

Engineering Contradiction:

Improvestructural stability of gatesVSAvoiddevice complexity

Core Design Contradiction:

Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The gate support structure is segmented into multiple components: a first gate support structure in a first non-active region, a second gate support structure in a second non-active region, and a third gate support structure connecting them. This segmentation allows each component to independently support specific gate sections, improving overall structural stability while maintaining manageable complexity through modular design.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The third gate support structure acts as an intermediary element that connects the first and second gate support structures. This intermediary component provides additional structural reinforcement in the non-active region, preventing gate peeling and collapsing without requiring complete redesign of the entire gate structure.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If gate support structures are added to non-active regions, then reliability is improved, but manufacturing complexity increases

Engineering Contradiction:

Improveelectrical reliabilityVSAvoidease of manufacture

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The gate support structures are formed concurrently with the gates during the same fabrication process step, rather than as a separate subsequent step. This preliminary action approach integrates the support structures into the existing manufacturing flow, improving electrical reliability through better structural support while avoiding additional manufacturing complexity.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The formation of gate support structures is merged with the gate formation process. Both structures are created in the same fabrication step using the same process steps, which ensures consistent material properties and reduces the total number of manufacturing steps required.

Inventive Principle:

Principle #5Merging (Combining)

3Strength

If gate support structures are added to non-active regions, then structural integrity is improved, but process complexity increases

Engineering Contradiction:

Improvestructural integrityVSAvoidprocess complexity

Core Design Contradiction:

StrengthVSDevice complexity

Solution Approach 1:

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS20250359277A1Gate Bar in Isolation Region of Gate Layout and Method of Fabrication Thereof

Publication Date: 2025.11.20 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

Gate layouts and/or devices implementing gate support structures (e.g., gate bars) to in non-active region areas (e.g., isolation regions), along with methods of fabrication thereof, are described herein. An exemplary gate support structure is connected to at least two gates (e.g., two to six, in some embodiments) that are disposed in a non-active region area. The at least two gates extend lengthwise along a first direction, and the gate support structure extends lengthwise along a second direction that is different than the first direction. The gate support structure and the at least two gates may be disposed on a substrate isolation structure, such as a shallow trench isolation (STI) structure. A composition and/or configuration of the gate support structure may be the same as or different than a composition and/or a configuration of the at least two gates.