Isolation-Region Gate Bars to Prevent Gate Collapse and Shorting

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Solution Overview

Problem

The integration of gate support structures in non-active region areas of integrated circuits (ICs) is necessary to prevent peeling, collapsing, and bending of gates, which can lead to electrical shorting and residue defects.

Innovation Solution

The implementation of gate support structures connected to at least two gates in non-active region areas, which extend lengthwise along a different direction than the gates, providing structural support and minimizing the risk of electrical shorting and residue defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If gate support structures are integrated in non-active region areas, then structural integrity and reliability are improved, but device complexity increases

Engineering Contradiction:
Improvegate structural integrityVSAvoidlayout complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The gate support structure is nested within the existing gate layout by extending it lengthwise along the same direction as the gates. This allows the support structure to be integrated into the non-active region areas without requiring separate fabrication processes or additional layout space, thereby improving gate structural integrity while minimizing increases in device complexity

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The gate support structure serves multiple functions: it provides mechanical support to prevent gate peeling, collapsing, and bending in non-active region areas, while also maintaining electrical isolation when properly configured. This multi-functionality allows a single structural element to address both reliability concerns and layout simplicity

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Manufacturing precision

If gate support structures are added to prevent gate peeling and collapsing, then manufacturing precision is improved, but ease of manufacture deteriorates

Engineering Contradiction:
Improvegate alignment precisionVSAvoidfabrication process complexity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The gate support structure is formed simultaneously with the gates in the same fabrication process step, using the same lithography and deposition operations. This preliminary integration ensures precise alignment between the support structure and gates without requiring additional alignment steps, thereby improving manufacturing precision while maintaining ease of manufacture

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The formation of the gate support structure is merged with the existing gate fabrication process. Both structures are patterned and deposited in the same process step, eliminating the need for separate fabrication sequences. This merging approach maintains manufacturing precision through consistent process conditions while simplifying the overall fabrication workflow

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS20250133806A1Gate Bar in Isolation Region of Gate Layout and Method of Fabrication Thereof
Publication Date: 2025.04.24 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250133806A1 patent drawing
  • US20250133806A1 patent drawing
  • US20250133806A1 patent drawing

AI summary

Gate layouts and/or devices implementing gate support structures (e.g., gate bars) to in non-active region areas (e.g., isolation regions), along with methods of fabrication thereof, are described herein. An exemplary gate support structure is connected to at least two gates (e.g., two to six, in some embodiments) that are disposed in a non-active region area. The at least two gates extend lengthwise along a first direction, and the gate support structure extends lengthwise along a second direction that is different than the first direction. The gate support structure and the at least two gates may be disposed on a substrate isolation structure, such as a shallow trench isolation (STI) structure. A composition and/or configuration of the gate support structure may be the same as or different than a composition and/or a configuration of the at least two gates.