Semiconductor Isolation Gate for Transistor Spacing
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Solution Overview
Problem
Standard semiconductor devices with isolation gates face limitations in minimizing transistor spacing due to the required separation distance, which restricts chip density and cell size optimization.
Innovation Solution
A semiconductor device design featuring a continuous diffusion region with isolation gate structures and conductive layers, where the isolation gate contact is electrically insulated from the diffusion regions, allowing for reduced spacing between transistors and improved electrical isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a break in diffusion region with dummy gate region is used to isolate adjacent transistors, then electrical isolation between transistors is achieved, but the minimum spacing between transistors increases
Solution Approach 1:
The gate structure is segmented into a first gate structure, an isolation gate structure, and a second gate structure. The isolation gate structure is positioned between the first and second gate structures and is electrically insulated from both, creating electrical isolation between adjacent transistors without requiring a break in the diffusion region. This segmentation allows the diffusion region to remain continuous while achieving isolation through the insulated gate structure.
Solution Approach 2:
The isolation gate structure serves as an intermediary element between the first and second gate structures. It is disposed between adjacent transistors and electrically insulated from both, acting as a mediator that provides electrical isolation without requiring physical separation of the diffusion regions. This intermediary structure enables isolation while maintaining continuous diffusion regions for better electrical connection.
2Reliability
If larger separation distance is used between transistors for isolation, then electrical isolation is improved, but chip density decreases
Solution Approach 1:
The gate structure is segmented into a first gate structure, an isolation gate structure, and a second gate structure. The isolation gate structure is positioned between the first and second gate structures and is electrically insulated from both, creating electrical isolation between adjacent transistors without requiring a break in the diffusion region. This segmentation allows the diffusion region to remain continuous while achieving isolation through the insulated gate structure.
Solution Approach 2:
Instead of achieving isolation through horizontal separation (increasing spacing in the plane), the invention uses vertical stacking with the isolation gate structure positioned between adjacent transistors. The continuous diffusion region extends beneath all gate structures, and the isolation gate structure provides isolation in the vertical dimension while maintaining horizontal proximity, thus increasing chip density without compromising electrical isolation.
3Quantity of substance
If continuous diffusion region is used with isolation gate structure, then chip density is enhanced, but manufacturing complexity increases
Solution Approach 1:
The continuous diffusion region serves multiple functions: it provides the active region for both the first and second transistors, maintains electrical connection between them, and works in conjunction with the isolation gate structure to enable high-density layout. The isolation gate structure itself is formed using similar processes as the main gate structures, making the multi-functional design manufacturable without significantly increasing process complexity.
Data Source
AI summary
An embodiment includes a semiconductor device, comprising: a substrate; a continuous diffusion region disposed on the substrate; a first gate structure disposed on the continuous diffusion region; a second gate structure disposed on the continuous diffusion region; an isolation gate structure disposed between the first gate structure and the second gate structure and disposed adjacent to the both the first gate structure and the second gate structure; a first diffusion region of the continuous diffusion region disposed between the first gate structure and the isolation gate structure; a second diffusion region of the continuous diffusion region disposed between the second gate structure and the isolation gate structure; a conductive layer disposed on the first and second diffusion regions; and an isolation gate contact disposed over the isolation gate structure and electrically insulated from the first diffusion region.