Isolation Pattern Height Control in Semiconductor Structures
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Solution Overview
Problem
The complexity of manufacturing and integration in semiconductor devices leads to inefficiencies, necessitating improved methods for creating semiconductor device structures with isolation patterns of varying heights.
Innovation Solution
A method involving the formation of a target layer and an energy-sensitive layer over a semiconductor substrate, where electron-beam writing processes create treated portions of different heights, which are then transferred into the target layer and substrate to form openings of varying depths, allowing for the same pattern transferring process to reduce fabrication costs and enhance design flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple different pattern transferring processes are used to create isolation patterns of varying heights, then manufacturing precision is improved, but device complexity and fabrication time increase
Solution Approach 1:
The energy-sensitive layer is divided into multiple regions with different energy thresholds, allowing selective removal at different heights. The layer is segmented by incorporating materials or structures that respond differently to energy treatment, enabling creation of multi-level openings without multiple patterning processes.
Solution Approach 2:
The patent changes the energy parameter (e.g., electron beam energy, plasma power) during the pattern transferring process to selectively remove different portions of the energy-sensitive layer. By adjusting energy parameters, the same process can create openings of different depths, eliminating the need for multiple separate patterning steps.
2Manufacturing precision
If multiple different pattern transferring processes are used to create isolation patterns of varying heights, then manufacturing precision is improved, but fabrication time increases
Solution Approach 1:
Multiple patterning operations are merged into a single pattern transferring process. The energy-sensitive layer is designed to respond to energy treatment in a way that allows simultaneous or sequential creation of different opening depths within one process run, significantly reducing fabrication time.
Solution Approach 2:
The energy-sensitive layer is pre-configured with different energy thresholds or sensitivities in different regions before the pattern transferring process. This preliminary structuring allows the single subsequent energy treatment to automatically create the desired multi-level pattern without requiring multiple sequential steps.
3Manufacturing precision
If multiple different pattern transferring processes are used to create isolation patterns of varying heights, then manufacturing precision is improved, but fabrication cost increases
Solution Approach 1:
The pattern transferring process is designed to be universal and multi-functional, capable of creating isolation patterns of different heights using the same process equipment and methodology. The energy-sensitive layer composition and structure enable a single process to perform what would traditionally require multiple specialized processes, reducing equipment and operational costs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of semiconductor device structures with isolation patterns of different heights, reducing fabrication costs and time while increasing design flexibility by utilizing the same pattern transferring process.
Implementation Method 1
The first energy treating process and the second energy treating process are electron-beam (e-beam) writing processes
Implementation Method 2
forming an energy-sensitive layer over the target layer... The energy-sensitive layer includes a cross-linking compound having a cross-linking functional group
Data Source
AI summary
A method for preparing a semiconductor device structure is provided. The method includes forming a target layer over a semiconductor substrate; forming an energy-sensitive layer over the target layer; performing a first energy treating process to form a plurality of first treated portions in the energy-sensitive layer; performing a second energy treating process to form a plurality of second treated portions in the energy-sensitive layer; removing the first treated portions and the second treated portions to respectively form a plurality of first openings and a plurality of second openings; transferring the first openings and the second openings into the target layer to respectively form a plurality of third openings and a plurality of fourth openings; and transferring the third openings and the fourth openings into the semiconductor substrate to respectively form a plurality of fifth openings and a plurality of sixth openings.