Isolation Plate and Substrate Envelope for Uniform Epitaxy Heating
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Solution Overview
Problem
Existing semiconductor processing chambers face challenges in achieving uniform thickness and purity of deposited films, particularly in low temperature epitaxy processes, due to non-uniform thermal profiles and contamination issues, which are exacerbated by substrate rotation, low rotation speeds, high pressures, and low flow rates.
Innovation Solution
The processing chamber incorporates an isolation plate assembly with materials that absorb or reflect different amounts of infrared radiation to tune the thermal profile, a substrate envelope assembly for improved heating efficiency and contamination prevention, and a pre-heat cylinder for gas flow control, allowing for temperature optimization and uniform film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If substrate rotation is used to improve deposition uniformity, then deposition uniformity is improved, but adjustment difficulty increases due to complex thermal profile control
Solution Approach 1:
The chamber is divided into multiple independently controllable heating zones with separate heaters positioned at different locations. Each zone can be adjusted independently to compensate for thermal variations, eliminating the need for complex substrate rotation control while achieving uniform deposition.
Solution Approach 2:
Different regions of the chamber are equipped with localized heating elements that can be independently controlled to create specific thermal profiles in different areas. This allows precise control of deposition conditions in each zone without requiring overall chamber rotation.
2Use of energy by stationary object
If low temperature epitaxy processes are used, then energy consumption is reduced, but deposition uniformity becomes difficult to achieve
Solution Approach 1:
The heating system uses dynamically adjustable power levels for each heating zone, allowing real-time optimization of temperature profiles during deposition. This enables low temperature processing while maintaining uniformity through active compensation of thermal variations.
Solution Approach 2:
The system independently adjusts temperature parameters in different chamber zones and modifies heating power levels to compensate for thermal losses at low temperatures. This allows maintaining uniform deposition conditions even during energy-efficient low temperature epitaxy processes.
3Productivity
If high pressure is used to improve gas flow, then gas flow rate increases, but deposition uniformity deteriorates due to non-uniform thermal profiles
Solution Approach 1:
The heating system is segmented into multiple independent zones with individual temperature control, allowing compensation of thermal non-uniformity even when high pressure and high gas flow rates are used. Each zone can be optimized independently to maintain deposition uniformity.
Solution Approach 2:
Temperature sensors in each heating zone provide feedback to the control system, which adjusts heating power in real-time to maintain uniform thermal profiles despite changes in pressure and gas flow conditions.
4Object-affected harmful factors
If low flow rate is used to reduce contamination, then contamination is reduced, but deposition uniformity becomes more difficult to achieve
Solution Approach 1:
Localized heating elements provide targeted thermal compensation in different chamber regions, enabling uniform deposition even when low flow rates are used to minimize contamination. Each local zone can be optimized for its specific thermal conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances thermal uniformity and purity of deposited films by adjusting the thermal profile and preventing contamination, improving film quality and growth rates in low temperature processes.
Implementation Method 1
an isolation plate assembly with materials that absorb or reflect different amounts of infrared radiation to tune the thermal profile
Implementation Method 2
an isolation plate assembly with materials that absorb or reflect different amounts of infrared radiation to tune the thermal profile
Implementation Method 3
applying infrared radiation from an infrared radiation source to the substrate
Data Source
AI summary
Embodiments of the disclosure provided herein include an apparatus and method for tuning the thermal profile on a substrate in the semiconductor processing chamber. The substrate processing chamber includes an upper body defining a processing volume, a heat source configured to heat the processing volume, a substrate envelope assembly disposed within the processing volume, and a substrate support assembly disposed within the substrate envelope assembly. The substrate processing chamber may also include a heat source disposed above the substrate support assembly and coupled to the upper body, an isolation plate assembly disposed between the substrate support assembly and the heat source, and a substrate envelope assembly. The substrate processing system may also include a pre-heat cylinder, the pre-heat cylinder includes a first replaceable portion with one or more inlet openings and a second replaceable portion with one or more outlet openings.