Isolation Trench Filling Structure for Crack-Sealed Semiconductor Layers
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Solution Overview
Problem
Existing semiconductor structures face issues with cracks forming in film layers during atomic layer deposition, leading to etching solvent penetration and bifurcation of film layers, which adversely affect the structure's performance.
Innovation Solution
A method involving the formation of a first isolation layer with a crack, followed by etching back to create a groove, and filling this groove with a second isolation layer to plug the crack, preventing solvent penetration and bifurcation during subsequent etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If atomic layer deposition is performed to fill grooves with consistent thickness, then film layer uniformity is improved, but cracks form in the middle of the film layers
Solution Approach 1:
The patent performs preliminary actions by forming sacrificial plugs in the grooves before depositing the film layers. These plugs serve as internal support structures that prevent crack formation during deposition. The plugs are strategically placed at locations where cracks are most likely to form, based on the predetermined pattern, thereby preventing the harmful effect before it occurs.
Solution Approach 2:
The sacrificial plugs act as intermediary elements between the substrate and the film layers. They provide mechanical support and stress distribution during the deposition process, preventing the film layers from cracking while maintaining the desired thickness uniformity. After deposition, these intermediaries are removed to reveal the crack-free film structure.
2Ease of manufacture
If cracks are present in film layers, then etching solvents can penetrate along cracks, but this causes bifurcation of film layers and performance degradation
Solution Approach 1:
The patent applies preliminary anti-action by forming sacrificial plugs that prevent crack formation in the first place. By eliminating the cracks before the etching process, the harmful penetration of etching solvents along cracks is prevented. The plugs remain in place during etching to block any potential solvent pathways, and are removed afterward to leave a clean, intact film structure.
3Reliability
If sacrificial plugs are formed in grooves before deposition, then crack formation is prevented, but additional manufacturing steps are required
Solution Approach 1:
The patent segments the fabrication process into distinct, manageable steps: forming sacrificial plugs at specific locations, depositing film layers over the plugs, and finally removing the plugs. This segmentation allows each step to be optimized independently and integrated into existing manufacturing workflows, reducing overall complexity despite the additional steps.
Solution Approach 2:
The patent utilizes parameter changes in the deposition process, such as adjusting deposition conditions to ensure proper film formation over and around the sacrificial plugs. By controlling parameters like deposition rate, temperature, and plasma power, the process achieves crack-free films while maintaining efficiency, offsetting the added complexity of the plug formation step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents etchant ingress through cracks, thereby maintaining the integrity of the semiconductor structure and enhancing its performance by preventing bifurcation of film layers.
Implementation Method 1
When performing atomic layer deposition process on existing semiconductor structures
Implementation Method 2
removing part of the first isolation layer by etching back to form an isolation filling groove
Data Source
AI summary
Embodiments relates to a semiconductor structure and a method for fabricating the same. The method includes: providing a substrate, where an isolation trench is formed in the substrate; forming a first isolation layer in the isolation trench, where the first isolation layer fills the isolation trench, and a crack extending to an upper surface of the first isolation layer along a vertical direction is formed in the first isolation layer; removing part of the first isolation layer by etching back to form an isolation filling groove in communication with a top opening of the crack; and forming a second isolation layer in the isolation filling groove to plug the top opening of the crack, where the first isolation layer and the second isolation layer jointly constitute an isolation structure.