Isolation Zone for Strain Uniformity in Non-Planar Transistors
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Solution Overview
Problem
In the fabrication of non-planar transistors, strain variations along the semiconductor body due to gaps formed for electrical isolation lead to inefficiencies in transistor performance, as the relaxation of strain affects channel mobility and electrical resistance.
Innovation Solution
The formation of an isolation zone within the semiconductor body instead of creating gaps, using techniques such as impurity implantation or oxidation to create a dielectric or poorly conductive region, which maintains strain uniformity and reduces free surface effects, thereby enhancing transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gaps are formed in the semiconductor body for electrical isolation, then electrical isolation between transistor regions is achieved, but strain uniformity deteriorates and channel mobility decreases
Solution Approach 1:
An isolation zone is introduced as an intermediary structure within the semiconductor body to achieve electrical isolation without creating disruptive gaps. This isolation zone acts as a mediator that electrically separates transistor regions while preserving the continuous semiconductor material, thereby maintaining strain uniformity and preventing the formation of free surfaces that would cause strain relaxation.
2Reliability
If gaps are created for electrical isolation, then electrical separation is achieved, but free surface effects increase causing strain relaxation
Solution Approach 1:
The isolation zone serves as an intermediary that provides electrical separation while avoiding the creation of free surfaces. By embedding this isolation region within the continuous semiconductor material rather than creating gaps, the harmful free surface effects that cause strain relaxation are eliminated while still achieving the required electrical separation between transistor regions.
3Manufacturing precision
If impurity implantation or oxidation is used to form isolation zones, then strain uniformity is maintained, but manufacturing process complexity increases
Solution Approach 1:
The isolation zones are formed through preliminary impurity implantation or oxidation steps performed during the standard fabrication sequence. By incorporating these strain-preserving isolation formation steps early in the manufacturing process, the patent maintains strain uniformity throughout subsequent processing without requiring additional complex interventions later.
Solution Approach 2:
The patent utilizes parameter changes in the semiconductor material through controlled impurity implantation or oxidation to create isolation zones. By adjusting parameters such as impurity concentration, oxidation time, and temperature, the isolation zones are formed with precise electrical properties while maintaining the semiconductor material's strain characteristics, avoiding the need for more complex structural solutions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures consistent strain distribution along the semiconductor body, improving channel mobility, reducing electrical resistance, and enhancing the efficiency and speed of transistors by minimizing strain relaxation, resulting in more uniform and effective transistor performance.
Implementation Method 1
strain variations along the semiconductor body due to gaps formed for electrical isolation lead to inefficiencies in transistor performance, as the relaxation of strain affects channel mobility
Implementation Method 2
using techniques such as impurity implantation or oxidation to create a dielectric or poorly conductive region
Implementation Method 3
using techniques such as impurity implantation or oxidation to create a dielectric or poorly conductive region
Data Source
AI summary
The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming isolation structures in strained semiconductor bodies of non-planar transistors while maintaining strain in the semiconductor bodies.