Isomeric Organofluorine Etching Gas for Profile-Selective Patterning
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Solution Overview
Problem
The increasing integration and miniaturization of semiconductor devices require an etching gas composition that provides excellent etch selectivity and improves pattern profile, which existing technologies have not adequately addressed.
Innovation Solution
An etching gas composition comprising at least two isomeric organofluorine compounds of carbon number C3 or C4, specifically 1,1,1,2,3,3-hexafluoropropane and 1,1,1,3,3,3-hexafluoropropane, with controlled molar ratios, along with an inert gas like argon and a reactive gas like oxygen, to form patterns with various aspect ratios without degrading selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing etching gas compositions are used, then the etching process can be performed, but the pattern profile is degraded and pattern hole distortion occurs
Solution Approach 1:
The patent changes the chemical composition parameters of the etching gas by using specific ratios of C3 and C4 organofluorine compounds with different carbon numbers. This parameter change optimizes the etching chemistry to achieve better pattern profiles and reduce hole distortion without compromising etching reliability
Solution Approach 2:
The patent employs a composite gas composition combining multiple organofluorine compounds (C3 and C4 types) with complementary properties. The synergistic effect of these composite gas components achieves superior pattern formation and hole uniformity that single-gas systems cannot provide
2Manufacturing precision
If etch selectivity is improved, then the etching precision increases, but the pattern profile may be compromised
Solution Approach 1:
The patent adjusts the compositional parameters of the organofluorine compounds to achieve an optimal balance between etch selectivity and pattern profile. By controlling the ratio of C3 to C4 compounds and selecting specific isomers, the gas composition simultaneously delivers high selectivity and excellent profile control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves desired etch rates and selectivity, maintaining high etch selectivity while improving pattern profiles, particularly for silicon compounds like silicon oxide and silicon nitride, suitable for channel hole etching and cell metal contact applications.
Implementation Method 1
etching the etch target layer through the etch mask by using plasma obtained from an etching gas composition
Data Source
AI summary
An etching gas composition includes at least two types of organofluorine compounds of carbon number C3 or carbon number C4, wherein the at least two types of organofluorine compounds are isomeric to each other.