Isosorbide Nitrate Ester Resist Suppresses Acid Diffusion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current chemically amplified resist compositions face challenges in achieving high sensitivity, resolution, and minimal edge roughness for microelectronic device manufacturing, particularly as feature sizes reduce, due to issues with acid diffusion and sensitivity tradeoffs.
Innovation Solution
A positive resist composition is developed using a polymer with recurring units of isosorbide nitrate ester, which suppresses acid diffusion and enhances dissolution contrast, sensitivity, and resolution, while maintaining minimal edge roughness, by incorporating acid labile groups and specific monomers to improve acid generation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the accelerating voltage is increased to improve line width accuracy, then resolution is improved, but resist film sensitivity decreases
Solution Approach 1:
The patent changes the chemical composition parameters of the resist film by incorporating specific compounds (compound A and compound B) that enhance acid generation efficiency. This allows the resist to maintain high sensitivity even at elevated accelerating voltages of 30-50 kV, resolving the contradiction between resolution improvement and sensitivity loss.
Solution Approach 2:
The patent creates a composite resist system by combining multiple components: base resist material, compound A (acid generator), and compound B (sensitivity enhancer). This composite approach enables simultaneous achievement of high resolution and high sensitivity that cannot be obtained with single-material systems.
2Reliability
If chemically amplified resist compositions are designed to enhance sensitivity and contrast by acid diffusion, then sensitivity is improved, but acid diffusion control becomes problematic for fine patterns
Solution Approach 1:
The patent introduces compound B which locally enhances acid generation at specific sites within the resist film. This localized acid generation mechanism allows fine patterns to be formed with precise control, as the acid diffusion is concentrated rather than widespread, thereby maintaining both sensitivity and manufacturing precision.
Solution Approach 2:
Compound B acts as an intermediary substance that mediates between the acid generator and the base resist material. It controls the acid diffusion process by providing a controlled release mechanism, preventing uncontrolled spread of acid while maintaining the necessary chemical amplification for high sensitivity.
3Manufacturing precision
If the post-exposure bake temperature and time are reduced to minimize acid diffusion, then resolution is improved, but sensitivity and contrast are drastically reduced
Solution Approach 1:
The patent incorporates acid generators and sensitivity enhancers into the resist film before exposure. This preliminary preparation allows the resist to achieve high sensitivity and contrast even with minimal post-exposure bake treatment, as the chemical amplification is already in place to enhance the exposure effects without requiring extended heating.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves high sensitivity, resolution, and controlled acid diffusion, forming patterns with good profiles and minimal edge roughness, suitable for advanced lithography processes such as EB and EUV lithography.
Implementation Method 1
an acid generator capable of generating a bulky acid... the addition of an acid generator capable of generating a bulky acid is an effective means for suppressing acid diffusion
Implementation Method 2
With respect to high-energy radiation of very short wavelength such as electron beam (EB) or x-ray, hydrocarbons and similar light elements used in resist materials have little absorption
Data Source
AI summary
A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl or phenolic hydroxyl group substituted with an acid labile group and recurring units of isosorbide nitrate ester, and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.


