ITO Common Electrode Laser Cutting for CF Substrate Insulation

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Solution Overview

Problem

The existing method of laser cutting ITO common electrodes on CF substrates for LCDs results in uneven film thickness, leading to poor insulation between ITO blocks due to incomplete cutting at the peripheral edges, causing interference between signal inputs.

Innovation Solution

A manufacturing method involving a continuous ITO film with uniform thickness on CF substrates, where the entire surface is initially cut using a laser, and a secondary laser cutting step along the uniform film thickness portion at the periphery forms a closed pattern, ensuring complete separation of ITO blocks and improved insulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If laser cutting is used to divide ITO common electrode into multiple blocks, then the ITO film can be separated into multiple regions for independent signal input, but the peripheral edge ITO film with thinner thickness cannot be completely cut, resulting in poor insulation between blocks

Engineering Contradiction:
Improveinsulation between ITO blocksVSAvoidcutting completeness at peripheral edge
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by performing a first laser cutting to divide the ITO film into multiple blocks, then performing a second laser cutting along the peripheral edge to completely separate the blocks. This two-step preliminary cutting process ensures that both the central and peripheral regions are properly separated, eliminating the insulation problem caused by incomplete single-pass cutting.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent segments the laser cutting process into two distinct stages: a first laser cutting to create initial separations between ITO blocks, and a second laser cutting along the peripheral edge to complete the separation. This segmentation allows each cutting step to address specific regions with different thickness characteristics, ensuring complete insulation.

Inventive Principle:
Principle #1Segmentation

2Ease of manufacture

If the ITO film thickness is uniform across the entire surface, then the laser cutting can be more effective, but the peripheral edge ITO film becomes thinner during deposition, reducing laser energy absorption and cutting capability

Engineering Contradiction:
Improvelaser cutting effectivenessVSAvoidfilm thickness distribution
Core Design Contradiction:
Ease of manufactureVSShape

Solution Approach 1:

The patent applies local quality by recognizing that different regions of the ITO film have different thickness characteristics - the central region has uniform thickness while the peripheral edge has thinner thickness. The two-step laser cutting process is designed to address each region's specific characteristics: the first cutting handles the central region, while the second cutting along the peripheral edge addresses the thinner edge regions, ensuring effective cutting throughout.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively enhances insulation between ITO blocks, allowing independent signal input without interference, with improved impedance between blocks reaching 20 MO or more.

Implementation Method 1

cutting the entire surface of the ITO film using a laser cutting

Methodology Applied
Scientific EffectLaser ablation: Laser Ablation

Implementation Method 2

the thinner the ITO film is, the lower surface temperature of the ITO film is

Methodology Applied
Scientific EffectOptical heating: Heating

Implementation Method 3

a physical vapor deposition process is adopted to form the entire surface of the ITO film

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentUS20210080789A1Manufacturing method for ITO common electrode on cf substrate side
Publication Date: 2021.03.18 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
  • US20210080789A1 patent drawing
  • US20210080789A1 patent drawing
  • US20210080789A1 patent drawing

AI summary

The manufacturing method for ITO common electrode on CF substrate side of the present invention, after diving entire surface of the ITO film into multiple ITO blocks, performing a laser cutting again along the uniform film thickness portion at the periphery of the entire surface of the ITO film, and a laser cutting path at the uniform film thickness portion at the periphery of the entire surface of the ITO film form a closed pattern such that the connection of each ITO block at the uneven thickness portion of the periphery of the entire surface of the ITO film can be completely cut off, and the multiple ITO blocks located in the closed pattern constitute the ITO common electrode on the CF substrate side, thereby the insulation between the multiple ITO blocks is improved, ensuring that different ITO blocks can independently inputted with different Curing signals without affecting each other.